Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)

Porst, A.; Auerbach, F.; Brunner, H.; Deboy, G.; Hille, F.

doi:10.1109/ispsd.1997.601475

Cited by 72 publications

(26 citation statements)

References 10 publications

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“…In [14], emitter efficiency control is shown to be effective in improving diode behavior, and the results are supported by experiments and carrier distribution measurement. In [15], numerical simulations are used to figure out the anode side emitter efficiency effect on diode behavior.…”

mentioning

confidence: 74%

Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design

Napoli

Strollo

Spirito

1999

IEEE Trans. Power Electron.

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The effect of localized lifetime control technique on the static and dynamic behavior of a power P-i-N diode is investigated in this paper. Mixed mode device circuit simulations are used in order to analyze the effect of the width and position of a reduced lifetime region on the diode. The simulations show that the optimal position for the low-lifetime region is at the beginning of the base region on the anode side, while the optimal width of the low-lifetime region depends on the amount of lifetime reduction. The local lifetime control design technique is shown to be effective in reducing the turn-off time and increasing diode softness with a little worsening of on-state voltage drop.It is shown that the tradeoff curve obtained by diodes using local lifetime control is better than the one achieved with lifetime killing in the whole epilayer region.Index Terms-Charge carrier lifetime, local lifetime control, P-i-N diodes, power semiconductor device.

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mentioning

confidence: 74%

Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design

Napoli

Strollo

Spirito

1999

IEEE Trans. Power Electron.

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“…Reduced SRH lifetime in general was found to decrease the magnitude of I Xing [2]. On the contrary, lifetime killing by means of platinum doping [1] was reported to increase the current I Xing . To our knowledge, there are no reports on influence of irradiation controlled lifetime on the magnitude of I Xing .…”

Section: Introductionmentioning

confidence: 92%

“…In this respect, the decreasing injection efficiency of anode emitter [1,2] and decreasing size of devices [3] were found helpful. Lifetime issues were also partly accounted for.…”

Section: Introductionmentioning

confidence: 98%

“…Since a lower magnitude of the crossing point current I Xing facilitates the above mentioned paralleling of devices [1], the design considerations should take into account the impact of process parameters on magnitude of I Xing . In this respect, the decreasing injection efficiency of anode emitter [1,2] and decreasing size of devices [3] were found helpful.…”

Section: Introductionmentioning

confidence: 99%

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Crossing point current of electron and proton irradiated power P-i-N diodes

Vobecký

Hazdra

Humbel

et al. 2000

Microelectronics Reliability

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“…[5][6][7] Moreover, a considerable amount of attention has recently been applied to reduce module noise in response to various EMI/EMC regulations that have been instituted around the world. Consequently, accompanying the development of the new IGBT technologies, the performance was thought to be approaching the theoretical limit of silicon power devices.…”

Section: Introductionmentioning

confidence: 99%

Chip Improvements for Future IGBT Modules

Donlon¹,

Motto²,

Takahashi³

et al. 2008

2008 IEEE Industry Applications Society Annual Meeting

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Since the introduction of the IGBT module, improvements in power loss have been achieved by applying new technologies. With the process improvements of the past few years in trench gate technology and light-punch-through vertical structures, it had been thought that the performance of the latest IGBT and pin diode silicon power devices had been brought as close to their theoretical limit as possible. In this paper, fine pattern processing technology is applied along with optimization of the low impurity profile of the buffer layer using thin wafer technology to further reduce the power loss.

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Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)

Cited by 72 publications

References 10 publications

Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design

Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design

Crossing point current of electron and proton irradiated power P-i-N diodes

Chip Improvements for Future IGBT Modules

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