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Insulated Gate Bipolar Iransistors (IGBT)play a leading role in industrial converter applications. They also reach traction applications where GTO and thyristors are the predominant switching devices. In this application especially power-cycling-stability and temperature-cycling-stability are very important requests for the long-term stability of switching devices. Since the mounting technology in wire bonded IGBTmodules is completely different to the pressure contacted GTO and thyristors, in this presentation a special focus will be brought to the power-cycling stability. Concerning this topic customer requests will be compared to the current state in power-cycling-stability of Siemens-and eupec-IGBT-modules. Principle device structures and mounting technology as well as predominant failure mechanisms will be introduced. The improvement in the power-cycling stability in the last view years will be demonstrated by comparing results of different mounting and bonding technologies. The power-cycling-test-equipment and a test method which allows on-line-monitoring during the powercycling-test will be shown. This method is based on the change of the forward voltage of the IGBTs caused by a change of the thermal resistance of the chips and the change of the ohmic resistance of the bond wire contact on the chip. The dependence of the IGBT-module's power cycling stability on its temperature swing as well as on its absolute temperature will be demonstrated.

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