Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Park, Jae Chul; Lee, Ho-Nyeon

doi:10.1109/led.2012.2190036

Cited by 65 publications

(46 citation statements)

References 10 publications

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“…Finally we make some comparisons between the novel DSCL TFTs proposed in this study and the prior arts reported in Refs [8] and [23]. In fact, the a-IZO/a-IGZO:N TFT exhibited almost the same attractively large field-effect mobility (~50 cm 2 ·V -1 ·s -1 ) as that of the a-IZO/a-IGZO TFT [8,23].…”

Section: Resultsmentioning

confidence: 75%

“…The large mobility of the a-IZO/a-IGZO:N TFT could be mainly attributed to the DSCL structure using a carrier-generation layer (a-IZO) with high defect density and a transport layer (a-IGZO) with low defect density [23]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In fact, the a-IZO/a-IGZO:N TFT exhibited almost the same attractively large field-effect mobility (~50 cm 2 ·V -1 ·s -1 ) as that of the a-IZO/a-IGZO TFT [8,23]. Moreover, the a-IZO/a-IGZO:N TFT showed the evident improvement in device stabilities over the a-IZO/a-IGZO TFT.…”

Section: Resultsmentioning

confidence: 99%

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Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Xie

et al. 2016

Applied Surface Science

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Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 99%

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Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Xie

et al. 2016

Applied Surface Science

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“…In comparison, Sample II was more stable under thermal stress, with a V TH that only shifted −2.5 V. Here we summarize the interesting results related to the N-doped DSCL TFTs. The µFE of AOS TFTs could be largely improved by using the DSCL composed of a high-defect-density channel layer and a low-defect-density channel layer to form the hetero-junction structure [19,21]. In this study, we deliberately designed and prepared the N-doped DSCL TFTs (Samples I and II) using the hetero-structure channel layers composed of a 15-nm-thick a-IZO:N layer and a 15-nm-thick a-IGZO:N layer, and finally obtained good electrical performance (e.g., the large µFE, the proper VTH, the small SS, and the large ION/IOFF), as shown in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…of TFTs. These improvements might result from the hetero-structure channel layers in DSCL devices [21][22][23]. In our recent reports, we obtained the DSCL structure by combining the a-IZO film with a-IGZO:N films, which made the corresponding TFTs exhibit quite a large µFE (49.6 cm 2 ·V −1 ·s −1 ) but too negative threshold voltage (VTH ~−2.3 V) [24,25].…”

Section: Methodsmentioning

confidence: 99%

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

et al. 2017

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Abstract:The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µ FE = 15.0 cm 2 ·V −1 ·s −1 , SS = 0.5 V/dec, V TH = 1.5 V, I ON /I OFF = 1.1 × 10 8 ) and stability (V TH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

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Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Cited by 65 publications

References 10 publications

Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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