Improvement of the short channel effect in PMOSFETs using cold implantation

Lee, Suk Hun; Park, Se Geun; Jeong, Seong Hoon; Jung, Hoeryong; Kim, Il Gweon; Kang, Do Hyung; Nam, Hyo-Jik; Kim, Dae Jung; Lee, Kyu Pil; Choi, Jongwan; Jung, Wanyeong; Park, Yongkook; Choi, Changhwan; Park, Jin‐Hong

doi:10.1016/j.materresbull.2016.02.027

Cited by 2 publications

(3 citation statements)

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“…2(c) . The results agree with the relationship between the implanted substrate temperature and defects in EOR 9 . As a result, the above analyses indicate there is a better crystal structure for the C samples after laser annealing.…”

Section: Resultssupporting

confidence: 87%

“…Qualitative study for this near surface region of dopant-implanted Si after fast annealing process becomes an essential and important subject for semiconductor foundry to optimize the implant and annealing conditions as the nano-device scales down below 10 nm. Besides, the technology of cold implant was developed to enhance the amorphous thickness and to reduce the dislocation defect via annealing process 7 – 9 . The usage of cold substrate in ion implantation will reduce the damage in end-of-range (EOR) and suppress the occurrence of activation anomalies, dopant diffusion and leakage current 9 – 11 .…”

Section: Introductionmentioning

confidence: 99%

“…Besides, the technology of cold implant was developed to enhance the amorphous thickness and to reduce the dislocation defect via annealing process 7 – 9 . The usage of cold substrate in ion implantation will reduce the damage in end-of-range (EOR) and suppress the occurrence of activation anomalies, dopant diffusion and leakage current 9 – 11 . However, it is hard to control the expected USJ since the structure evolution via fast annealing treatments are complicated and their control parameters are critical.…”

Section: Introductionmentioning

confidence: 99%

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The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

Lee

Kao

et al. 2017

Sci Rep

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Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and reflective second harmonic generation (RSHG) are utilized to monitor the pulse laser induced atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) at room and cold substrate temperature. A peak feature around 480 cm−1 resolved in UV Raman spectra indicates the formation of Si-B bond after the laser irradiation. The red shift of binding energy of Si element (~99 eV) in XPS and the evolution of absorption peak (~196.2 eV) in XANES reveal that the changes in the chemical states of ultra shallow junction strongly correlate to the activation process of Boron implantation, which is confirmed by RSHG measurement. The substrate temperature effect in the recrystallization of Boron implanted region is also realized by cross-section high-resolution TEM (HRTEM). The phenomena of Si-B bond formation and ultra-shallow junction recrystallization can be traced and applied to improve the reliability of Si ultra shallow junction in the future.

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Section: Resultssupporting

confidence: 87%