Improvement of thermal sensors based on Bi2Te3, Sb2Te3 and Bi0.1Sb1.9Te3

Mzerd, A.; Tcheliebou, F.; Sackda, A.; Boyer, Alexandre

doi:10.1016/0924-4247(94)00926-9

Cited by 33 publications

(16 citation statements)

References 2 publications

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“…This is due to the lower value of Sb 2 Te 3 Seebeck coefficient (110 V/K). In the variation range of these properties, this result is better than that obtained by Mzerd et al [19] for (Bi 01 Sb 1,9 ) 2 Te 3 elaborated by MBE.…”

Section: Thin Films Characterization and Experimental Detailscontrasting

confidence: 63%

“…The best p-type materials seem to be the Sb-rich thin films of (Bi 1−x Sb x ) 2 Te 3 . Thin Films of (Bi 1−x Sb x ) 2 Te 3 have been grown by different techniques such as sputtering [17], flash evaporation [18], and molecular beam epitaxy [19]. Venkatasubramanian [7,8] has reported a high figure of merit ZT of around 2.4 for Bi 2 Te 3 /Sb 2 Te 3 superlattice devices.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

Boulouz

Giani

Sorli

et al. 2014

Journal of Materials

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The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST) semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T)) at room temperature for Bi2Te3, and (Bi1−xSbx)2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

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Section: Thin Films Characterization and Experimental Detailscontrasting

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

Boulouz

Giani

Sorli

et al. 2014

Journal of Materials

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“…In recent years, considerable attention has also been devoted to Sb 2 Te 3, Bi 2 Te 3 and their alloys because of their potential applications in the fabrication of thermoelectric devices based on the Seebeck effect, such as thermal sensors, hyper frequency power sensors, thermopiles, and wide-band radiation detectors Therefore, with increasing interest in thin film thermoelectric devises, attempts have been made to deposit and investigate the (Sb 2 Te 3 -Bi 2 Te 3 ) alloys. Using several techniques [5][6][7][8][9], Sb 2 Te 3 films were grown on various substrates such as SiO 2 [5], mica [10] or polymide [11][12][13][14][15]. p-type samples have been reported to contain a telluriumrich second phase whose effect on the thermoelectric properties is deleterious as reported by Airapetiants [16], Tiller [17], and also by W.Yim et al [18].…”

Section: Introductionmentioning

confidence: 94%

Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films

Rajasekar¹,

Kungumadevi²,

Subbarayan³

et al. 2007

Ionics

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Thin films of Sb 2 Te 3 and (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) 30 alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2× 10 −6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb 2 Te 3 ) 70 (Bi 2 Te 3 ) 30 and (Sb 2 Te 3 ) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.

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“…Electrodeposition as a method for thin film preparation is a good approach with respect to economic considerations and large area can be prepared without vacuum, using simple and low cost equipments. Ternary compound semiconducting thin films such as Bi 1.5 Sb 0.5 Te 3 [5], Bi 2 Te 3 − y Se y [6], CdSe x Te 1 − x [7], SnS 0.5 Se 0.5 [8], Sb 2 − x Bi x Te 3 [9], Bi 2 − x Sb x Te 3 [10], Bi 0.4 Te 3 Sb 1.6 [11], Bi 0.1 Sb 1.9 Te 3 [12] and (Bi x Sb 1 − x ) 2 Te 3 [13] have been reported by different researchers. Patil et al [14] prepared (Bi 1 − x Sb x ) 2 S 3 mixed thin films by arrested precipitation technique and reported structural, electrical, and optical properties.…”

Section: Introductionmentioning

confidence: 99%