Improvements of a digital 25 μm pixel-pitch uncooled amorphous silicon TEC-less VGA IRFPA with massively parallel Sigma-Delta-ADC readout

Weiler, Dirk; Ruß, M.; Würfel, Daniel; Lerch, Renee; Yang, Pin; Bauer, J.; Hess, J.; Kropelnicki, Piotr; Vogt, H.

doi:10.1117/12.883791

Cited by 5 publications

(3 citation statements)

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“…The remaining part is overcompensated by decreasing the thermal conduction G th of the microbolometer structure. The thermal conductivity depends mainly on the design of the supporting legs 7 . Therefor the length has been increased and the width and thickness have been decreased.…”

Section: Microbolometermentioning

confidence: 99%

Uncooled digital IRFPA-family with 17μm pixel-pitch based on amorphous silicon with massively parallel Sigma-Delta-ADC readout

et al. 2014

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This paper presents the results of an advanced digital IRFPA-family developed by Fraunhofer IMS. The IRFPA-family compromises the two different optical resolutions VGA (640 x 480 pixel) and QVGA (320 x 240 pixel) by using a pincompatible detector board. The uncooled IRFPAs are designed for thermal imaging applications in the LWIR (8 .. 14µm) range with a full-frame frequency of 30 Hz and a high thermal sensitivity. The microbolometer with a pixel-pitch of 17µm consists of amorphous silicon as the sensing layer. By scaling and optimizing our previous microbolometer technology with a pixel-pitch of 25µm we enhance the thermal sensitivity of the microbolometer. The microbolometers are read out by a novel readout architecture which utilizes massively parallel on-chip Sigma-Delta-ADCs. This results in a direct digital conversion of the resistance change of the microbolometer induced by incident infrared radiation. To reduce production costs a chip-scale-package is used as vacuum package. This vacuum package consists of an IRtransparent window with an antireflection coating and a soldering frame which is fixed by a wafer-to-chip process directly on top of the CMOS-substrate. The chip-scale-package is placed onto a detector board by a chip-on-board technique. The IRFPAs are completely fabricated at Fraunhofer IMS on 8" CMOS wafers with an additional surface micromachining process. In this paper the architecture of the readout electronics, the packaging, and the electro-optical performance characterization are presented.

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Section: Microbolometermentioning

confidence: 99%

Uncooled digital IRFPA-family with 17μm pixel-pitch based on amorphous silicon with massively parallel Sigma-Delta-ADC readout

et al. 2014

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“…IRFPAs manufactured by the Fraunhofer IMS [1] like other MEMS (micro electro-mechanical systems) need a hermetic package with an integrated vacuum below 10 À2 mbar. Independently from which packaging and bonding process is chosen, the increasing internal pressure directly leads to performance reductions of the IRFPA.…”

Section: Introductionmentioning

confidence: 99%

Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors

Elßner

2014

Microelectronics Reliability

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“…FOM of our bolometer device in comparison with the values reported in previous literatures. ,− Here, the NETD has been normalized with the noise bandwidth of 1 Hz …”

mentioning

confidence: 99%

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

Chen

Min

et al. 2021

Nano Lett.

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The microbolometer is the cornerstone device for imaging in the long-wavelength infrared range (LWIR) at room temperature. The state-of-the-art commercial microbolometers usually have a large thermal time constant (TTC) of over 10 ms, limited by their substantial device heat capacity. Moreover, the minimal pixel size of state-of-the-art bolometer is around 10 μm by 10 μm to ensure sufficient power absorption per pixel. Here, we demonstrate an ultrafast silicon nanomembrane microbolometer with a small heat capacity of around 1.9 × 10 −11 J/K, which allows for its operation at a speed of over 10 kHz, corresponding to a TTC of less than 16 μs. Moreover, a compact diabolo antenna is leveraged for efficient LWIR light absorption, enabling the downscaling of the active area size to 6.2 μm by 6.2 μm. Because of the complementary metal oxide semiconductor (CMOS)-compatible fabrication processes, our demonstration here may lead to a future high-resolution and high-speed LWIR imaging solution.

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Improvements of a digital 25 μm pixel-pitch uncooled amorphous silicon TEC-less VGA IRFPA with massively parallel Sigma-Delta-ADC readout

Cited by 5 publications

References 0 publications

Uncooled digital IRFPA-family with 17μm pixel-pitch based on amorphous silicon with massively parallel Sigma-Delta-ADC readout

Uncooled digital IRFPA-family with 17μm pixel-pitch based on amorphous silicon with massively parallel Sigma-Delta-ADC readout

Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

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