The crystal structure
of R3̅c NaSICON type A
x
M2(TO4)3 (M = Al, Ce, Co, Cr, Fe, Ge, Hf, In, Li, Mg,
Mn, Mo, Na, Nb, Ni, Sb, Sc, Se, Sn, Ta, Ti, U, V, Y, Yb, Zn, Zr; T
= As, Ge, Mo, P, S, Si, V) with its multiple internal degrees of freedom
offers considerable flexibility and can accommodate dozens of different
ions leading to hundreds of reported compositions. In this work, the
ideal R3̅c structure with
undistorted [MO6] octahedra and [TO4] tetrahedra
is parametrized and used to quantify distortion of about 340 real
NaSICON-type oxides consistently across the entire family. It is shown
that distortion is primarily driven by the size mismatch between the
A cations and M2(TO4)3 framework,
that can be used to optimize the geometry of the structure to control
properties, such as A-ionic conductivity or thermal expansion.