Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Dutertre, Jean-Max; Bastos, Rodrigo Possamai; Potin, Olivier; Flottes, Marie-Lise; Rouzeyre, Bruno; Natale, Giorgio Di; Sarafianos, Alexandre

doi:10.1016/j.microrel.2014.07.151

Cited by 27 publications

(23 citation statements)

References 7 publications

(14 reference statements)

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“…This current, which is not taken into consideration by the model in Fig. 2, can have a significant effect on the fault injection mechanism by inducing a supply voltage drop [34]. 2) Proposed Transient Fault Model of a Cell Under Laser Illumination: Fig.…”

Section: Enhanced Laser Fault Modelmentioning

confidence: 99%

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Viera

Maurine

Dutertre

et al. 2020

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Laser fault injections induce transient faults into ICs by locally generating transient currents that temporarily flip the outputs of the illuminated gates. Laser fault injection can be anticipated or studied by using simulation tools at different abstraction levels: physical, electrical or logical. At the electrical level, the classical laser-fault injection model is based on the addition of current sources to the various sensitive nodes of CMOS transistors. However, this model does not take into account the large transient current components also induced between the VDD and GND of ICs designed with advanced CMOS technologies. These short-circuit currents provoke a significant IR-drop that contribute to the fault injection process. This paper describes our research on the assessment of this contribution. It shows through simulation and experiments that during laser fault injection campaigns, laser-induced IR-drop is always present when considering circuits designed with deep submicron technologies. It introduces an enhanced electrical fault model taking the laserinduced IR-drop into account. It also proposes a methodology that allows the use of the model to simulate laser-induced faults at the electrical level in large-scale circuits. On the basis of further simulations and experimental results, we found that, depending on the laser pulse characteristics, the number of injected faults may be underestimated by a factor of up to 2.4 if the laser-induced IR-drop is ignored. This could lead to incorrect estimations of the fault injection threshold, which is especially relevant to the design of countermeasure techniques for secure integrated systems.

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Section: Enhanced Laser Fault Modelmentioning

confidence: 99%

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Viera

Maurine

Dutertre

et al. 2020

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…BBICSs are designed to take advantage of this property: they monitor bulk currents (i.e. currents passing through P-taps and N-taps), hence they are able to detect unusual radiation-induced currents and, consequently, the appearance of SEEs [4], [5]. Fig.…”

Section: Bbics Principlesmentioning

confidence: 99%

Laser testing of a double-access BBICS architecture with improved SEE detection capabilities

Champeix

Dutertre

Pouget

et al. 2016

2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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“…This transistor is not protected by any additional guard ring, because enough insulation from substrate currents is provided by the double well structure. It's interesting to note that the use of triple-well NMOS transistors as circuit devices was later presented as a way to circumvent the NMOS bulk current collection problem in Bulk-BICS technology [5] and may be a solution to the inherent latchup risk [4] in circuits monitored by Bulk-BICS, despite the large increase in silicon area consumption in some processes and a greater vulnerability to low-LET particles [2] when compared to regular, dual-well, devices.…”

Section: Device Descriptionmentioning

confidence: 99%

Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell

et al. 2015

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Integrated circuits operating in space and harsh radiation environments are subject to the progressive accumulation of Total Ionizing Dose (TID), as well as to Single Event Transients (SET) produced by single energetic particles. We designed Bulk Built-In Current Sensors with Dynamic Storage Cell (DynBICS) to detect SET induced by ionizing radiation in NMOS and PMOS transistors. In this work the impact of TID on a complementary pair of DynBICS circuits is studied. The DynBICS were manufactured in IBM 130 nm technology and proved to be resistant to TID effects up to the limit of 600 krad (Si). The total dose reached in the test campaign was 616 krad (Si) from a 60 Co gamma source. The ability of the DynBICS to detect SET remained fairly stable, and the impact of the accumulated dose on the performance of the circuit is discussed in detail.

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Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Cited by 27 publications

References 7 publications

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Laser testing of a double-access BBICS architecture with improved SEE detection capabilities

Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell

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