Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics

Hung, Chien Hsiung; Wang, Shui Jinn; Liu, Pang Yi; Wu, Chien-Hung; Yan, Hong‐Sen; Wu, Nai Sheng; Lin, Tseng Hsing

doi:10.1016/j.mssp.2017.05.017

Cited by 12 publications

(8 citation statements)

References 55 publications

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“…The N it values are extracted to be 2.4 × 10 11 , 2.8 × 10 11 , and 1.35 × 10 11 eV −1 cm −2 for the a-IGZO, a-IZO, and a-IZO/a-IGZO bilayer, respectively. Such N it values are comparable to or even lower than previous reports, [59][60][61] consistent with the smooth interfaces observed in the HRTEM images, and plausibly also benefited from the defect-suppressing effect of oxidizing postanneal. [54,55] As analyzed using an atomic force microscope (AFM) (Figure S1, Supporting Information), the sputtered a-IGZO and a-IZO both exhibit smooth surfaces with the root-mean-square surface roughness of <0.6 nm.…”

Section: Resultssupporting

confidence: 90%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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Section: Resultssupporting

confidence: 90%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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“…Also, as described, high Ti doping resulted in large hysteresis in the transfer characteristics (Figure a–c). It is understood that electron trapping at the gate dielectric/channel interface is one of the major factors affecting the hysteresis behavior. , Therefore, it can be expected that the interfacial trap density increases in highly Ti-doped TiZnSnO TFTs, deteriorating the PBS stability and hysteresis characteristics.…”

Section: Resultsmentioning

confidence: 99%

Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors

Park

Jeon

et al. 2023

ACS Appl. Electron. Mater.

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Multicationic oxide semiconductors are receiving considerable interest in electronic and optoelectronic devices owing to their tunability of physical properties by the cation compositions. Here, we investigated the effects of Ti doping on the electrical properties and gate-bias stability of amorphous zinc−tin− oxide (a-ZnSnO, Zn/Sn = 7:3) thin-film transistors (TFTs) using a cosputtering process. Particularly, by using cosputtering, controllable doping of Ti in a-ZnSnO films was possible in the range of 0.87−3.87 atom %. From various electrical analyses, it was found that the key metrics of Ti-doped ZnSnO (TiZnSnO) TFTs, such as field-effect mobility and gate-bias stability, were highly dependent on the Ti concentration, showing a mobility−stability tradeoff. Based on X-ray photoelectron spectroscopy analysis, the mobility−stability tradeoff is ascribed to the suppression of oxygen vacancy formation by Ti doping. Considering the overall electrical performance and stability of TiZnSnO TFTs, which were processed at 450 °C, the optimal Ti concentration was determined as ∼1.14 atom % with Zn, Sn, and O concentrations of 15.87, 22.92, and 60.07 atom %, respectively. The device exhibited a field-effect mobility of 8.2 cm 2 V −1 s −1 , a subthreshold slope of 0.208 V decade −1 , an on/off ratio of 3.38 × 10 8 , a hysteresis of 2.8 V, and a threshold voltage shift of +5.61 and −2.24 V under positive-and negative-bias stresses, respectively.

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“…37,48,66 Numerous studies have reported improved environmental stability of top-gate a-IGZO TFTs using a variety of dielectric materials. 41,43,60,69 It is therefore expected that the top-gate SAND TFTs will have superior environmental stability compared to bottom-gate devices. A further advantage of the solution-processed Hf-SAND used here is limiting a-IGZO damage by high-energy dielectric deposition techniques such as sputtering.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In a-IGZO films, oxygen vacancies and other defects play a significant role in device performance. ,− Studies of a-IGZO films indicate that the role of oxygen vacancies and trap densities is highly dependent on growth conditions such as O 2 partial pressure and annealing parameters; the density of defects is expected to be higher in solution-processed films and their effects more evident. , Note that often the dielectric leakage current dictates the off current of a device. In the present case, the top-gate a-IGZO/Hf-SAND-4 TFT off current is a few orders of magnitude greater than the leakage current (Figure c and Figure S7), indicating significant defects.…”

Section: Resultsmentioning

confidence: 99%

“…The well-known sensitivity of a-IGZO to atmospheric effects is known to contribute to device instability and is a major attraction of top-gate devices. ,, Numerous studies have reported improved environmental stability of top-gate a-IGZO TFTs using a variety of dielectric materials. ,,, It is therefore expected that the top-gate SAND TFTs will have superior environmental stability compared to bottom-gate devices. A further advantage of the solution-processed Hf-SAND used here is limiting a-IGZO damage by high-energy dielectric deposition techniques such as sputtering. ,, The confirmed viability of SAND in top-gate TFT structures also opens possibilities for further work on SAND-based device durability, such as long-term stability testing, an important step for deeper understanding of the properties of this unconventional hybrid dielectric.…”

Section: Resultsmentioning

confidence: 99%

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Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

Stallings

Smith

Chen

et al. 2021

ACS Appl. Mater. Interfaces

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Metal oxide semiconductors, such as amorphous indium gallium zinc oxide (a-IGZO), have made impressive strides as alternatives to amorphous silicon for electronics applications. However, to achieve the full potential of these semiconductors, compatible unconventional gate dielectric materials must also be developed. To this end, solution-processable self-assembled nanodielectrics (SANDs) composed of structurally well-defined and durable nanoscopic alternating organic (e.g., stilbazolium) and inorganic oxide (e.g., ZrO x and HfO x ) layers offer impressive capacitances and low processing temperatures (T ≤ 200 °C). While SANDs have been paired with diverse semiconductors and have yielded excellent device metrics, they have never been implemented in the most technologically relevant top-gate thin-film transistor (TFT) architecture. Here, we combine solution-processed a-IGZO with solution-processed four-layer Hf-SAND to fabricate top-gate TFTs, which exhibit impressive electron mobilities (μ SAT = 19.4 cm 2 V −1 s −1 ) and low threshold voltages (V th = 0.83 V), subthreshold slopes (SS = 293 mV/dec), and gate leakage currents (10 −10 A) as well as high bias stress stability.

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Improving the electrical and hysteresis performance of amorphous igzo thin-film transistors using co-sputtered zirconium silicon oxide gate dielectrics

Cited by 12 publications

References 55 publications

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Effects of Ti Doping on the Electrical Properties and Gate-Bias Stability of Amorphous Zinc–Tin–Oxide Thin-Film Transistors

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

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