Improving the lifetime of a polymer light-emitting diode by introducing solution processed tungsten-oxide

Kanwat

et al. 2014

Phys. Status Solidi A

Self Cite

We studied the solution processed vanadium pentoxide (V2O5) doping effect in PEDOT:PSS for use in hole injection layer (HIL), and as a result, V2O5 doped PEDOT:PSS improved the performance of polymer light‐emitting diode (PLED) significantly. The improvement is related to the increased conductivity of PEDOT:PSS by V2O5 doping. This improvement enhances hole injection into the emission layer, and it will improve the charge balance. The PLED with PEDOT:PSS HIL and super yellow polymer has maximum current and power efficiencies of 12.01 cd A−1 and 9.67 lm W−1, respectively. On the other hand, the device with V2O5 (10:1) doped PEDOT:PSS indicates the maximum current and power efficiencies of 15.12 cd A−1 and 12.66 lm W−1, respectively, indicating that the efficiencies increase over 20% compared to the control device. The leakage currents of the PLED decrease to ∼10% of the control PLED. Note also that V2O5 suppressed the diffusion of indium from anode to PEDOT:PSS, and also prevented the acidic damage from sulfate ions of PEDOT:PSS to IZO and active layer.

Section: Introductionmentioning

confidence: 99%

Solution processed polymer light emitting diode with vanadium-oxide doped PEDOT:PSS

Kanwat

et al. 2014

Phys. Status Solidi A

Self Cite

“…[ 11d ] Metal oxide films can also be relatively resistive restricting their use to that of thin (approximately few nanometer thick) HILs that may then require an additional, thicker, HTL on top, again increasing the fabrication step count. [ 11 , 12 ]…”

mentioning

confidence: 99%

High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer

et al. 2014

“…Transition Metal Oxides (TMOs) have attracted substantial interest owing to their potential applications such as sensors, solar cells, photocatalysis and electrochromic devices [1][2][3][4][5] . ZnO,TiO 2 , SnO 2 , MoO 3 and WO 3 are the most standard semiconductor metal oxides used in the optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

The n-type tungsten oxide (WO 3 ) polycrystalline thin films have been prepared at an optimized parameters (0.20M, 5 ml and 500 o C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO 3 films were characterized by XRD, SEM, EDAX, UV-vis from I-V. The XRD pattern of the optimized WO 3 film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO 3 was recorded as 1.201 x 10 -8 S/cm from I-V characterization for 500°C.Using J-V plot, the diode parameters of n-WO 3 /p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ b ) values of n-WO 3 /p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.