Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review

“…However, an opposite V-shaped p-EBL which has the lowest Al-content in the middle and high Al-content in two sides has been proved to be a worse strategy than the triangular shape p-EBL [86]. In addition to these interesting EBL designs, graded p-EBLs with relatively complex band structure configurations have also been proposed [87][88][89]. All these strategies are intended to improve the capability of p-type EBLs for better carrier injection.…”

Study of AlGaN-based deep ultraviolet laser diodes using one-way step-shaped quantum barriers and symmetrical step-shaped electron and hole blocking layers

“…6,7 However, due to the lattice mismatch and polarization of the electric field, the device still contains serious amounts of carrier leakage along with its weak carrier confinement capabilities and low output power. 8,9 To solve the above problems, Yi et al 10 proposed graded superlattice electron and hole blocking layers to reduce the carrier leakage, Shi et al 11 designed irregular electron and hole blocking layers to improve carrier confinement, and Xing et al 12 proposed a set of convex quantum wells in the multiple-quantum-wells (MQWs) AlGaN-based DUV-LDs to improve the carrier injection efficiency. In addition, Wang et al 13 designed symmetric step-like quantum barriers (QBs) in the single quantum well AlGaN-based DUV-LDs that increased the stimulated emission rate, and Zhang et al 14 changed, in a linear way, the composition of the QB to enable a weakening of the polarization effect and an increase in the injection and recombination of electrons and holes in the active region.…”

“… – 5 In addition, deep ultraviolet laser diodes (DUV-LDs) have been extensively studied and applied because of their small size, light weight, and high-level reliability 6 , 7 . However, due to the lattice mismatch and polarization of the electric field, the device still contains serious amounts of carrier leakage along with its weak carrier confinement capabilities and low output power 8 , 9 …”

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

“…Флуктуации состава индия с ростом ширины квантовой ямы усиливает люминесценцию за счет роста потенциала локализации [13]. Целесообразно использование дополнительных слоев [14][15][16], сверхрешеток [17,18] и барьеров специальной формы [19,20], которые увеличивают перекрытие волновых функций электрона и дырки в квантовых ямах и, следовательно, скорости излучательной рекомбинации. Этому же способствует уменьшение квантово-размерного эффекта Штарка [13] и поляризационных полей [12,21,22].…”