Improving the performance of photonic transistor memory devices using conjugated block copolymers as a floating gate

Chen, Yu-Che; Lin, Yan‐Cheng; Hsieh, Hui‐Ching; Hsu, Li‐Che; Yang, Weichen; Isono, Takuya; Satoh, Toshifumi; Chen, Wen‐Chang

doi:10.1039/d0tc05326k

Cited by 35 publications

(56 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[5][6][7][8] Especially, photonic FET memory, in addition to the aforementioned advantages, currently presents a high current contrast (10 5 ), fast programing time (<3 s), and prolonged retention time (>10 4 s), etc. [9][10][11][12] Many design strategies have been proposed concerning the plethora of the charge trapping materials including an organic-inorganic hybrid floating gate, [13,14] a conjugated/insulating polymer blends based floating gate, [15,16] rod-coil molecules with highly order layer structure, [17,18] donor-acceptor copolymers, [19][20][21] conjugated block copolymers (BCPs), [22] or charge-transfer supramolecules [23] as polymer electrets. Among them, polyfluorene (PF)-based BCPs are multifunctional with its favorable energy level adaption with channel materials like pentacene or dinaphthothienothiophene, and decent photoresponse along with their semiconducting properties.…”

Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

“…[24][25][26] Especially, the current leakage from the electret to channel layer due to the extension in π-conjugation of the PF backbone can be efficiently assuaged by forming microphase separation with an insulating polymer segment. [22,[27][28][29] Therefore, PF-based BCPs with polystyrene (PS) coils (PF-b-PS) were evidenced as a highperforming polymer electret in photonic FET memory with a current contrast of 10 4 over 10 4 s. [22] Previously, our group proposed a series of PF-based BCPs with poly(pendent isoindigo) (Piso) coils (PF-b-Piso) as the electret for stretchable memristor. [30] The device was fabricated by integrating PF-b-Piso on a soft PDMS substrate with a high ON/OFF ratio of 10 5 under 0-50% applied tensile strain.…”

Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

“…It is understood that the difference in HOMO levels between PF and pentacene can prevent carrier back-trapping; while a lower-lying LUMO level of insulating segment (Piso) compared to PF is favorable for stabilizing trapped charges. [22]…”

Section: Materials Characterizationmentioning

confidence: 99%

“…[30] However, it was observed that the nanofibrils with a strong aggregation of PF would easily induce charge recombination and deteriorate the memory performance. [22] Therefore, a high boiling point solvent of chlorobenzene was used to achieve nanocluster morphology in the PF-b-Piso films.…”

Section: Morphological Characterization Of the Bcp Thin Filmsmentioning

confidence: 99%

See 3 more Smart Citations

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Lin

Yang

et al. 2021

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

In this study, the authors report a series of conjugated block copolymers, PF‐b‐Piso comprising poly[2,7‐(9,9‐dihexylfluorene)] (PF), and poly(pendent isoindigo) (Piso) for polymer electret in the photonic field‐effect transistor (FET) memory device. The optical properties, surface morphology, and molecular organization of these BCPs are investigated systematically. Accordingly, Piso with absorption in the Ultraviolet C range (UVC, 200–280 nm) possibly rendered the device with a multiband photoresponse, and a good memory performance is achieved by optimizing the polymer composition. Therefore, the memory device comprising PF‐b‐Piso could perform a high current contrast of 106 to 405 nm light and 105 to 254 nm light over 104 s. In addition, a current contrast of 104 and 102 is achieved in response to 650 and 530 nm light, and this phenomenon can be attributed to the charge transfer between channel and memory layers. The experimental results indicate that the block copolymer design not only conduces to forming a self‐assembled microphase separation to stabilize the trapped charge in the polymer electret, but also triggers multiband photoresponding of the photonic FET memory.

show abstract

Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

Section: Multiband Photoresponding Field-effect Transistor Memory Using Conjugated Block Copolymers With Pendent Isoindigo Coils As a Polmentioning

confidence: 99%

Section: Materials Characterizationmentioning

confidence: 99%

Section: Morphological Characterization Of the Bcp Thin Filmsmentioning

confidence: 99%

See 2 more Smart Citations

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Lin

Yang

et al. 2021

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, the homogeneous dispersion and precise control of the floating‐gate hampers their processability. In addition, conjugated block copolymers [ 21 ] and rod‐coil molecules [ 22 ] are considered unsuitable as they involve difficult synthetic routes. Accordingly, it is highly desirable to establish a facile approach to fabricate high‐performance photonic FET memories with facile electrets.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Photo‐Induced Recovery Conferred Using Charge‐Transfer Supramolecular Electrets in Bistable Photonic Transistor Memory

Yang

Chiang

Lin

et al. 2021

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

Donor–acceptor type polymers and supramolecules are promising electrets in photonic field‐effect transistor (FET)‐type memory because of their diversified polymer‐structure design and favorable mechanical tolerance. Using intermolecular association, supramolecule electrets can surpass donor–acceptor type polymers with versatile facile combining processes. Currently, there has been no application of charge‐transfer (CT) supramolecules in electrets of photonic FET memory devices. Herein, a novel series of CT‐based supramolecular electrets comprising poly(1‐pyrenemethyl methacrylate) (PPyMA) and 7,7,8,8‐tetracyanoquinodimethane (TCNQ) is used to elucidate the effect of CT on photonic FET memory. Accordingly, memory devices based on the supramolecular electret with an equimolar content of pyrene and TCNQ exhibit superior bistable memory switchability using electrical/photoprograming with UV (365 nm) and green light (525 nm). This shows a broad memory window of 34 V and favorable memory ratio of over 106 after 104 s. The memory performance can be attributed to the favorable molecular association and dispersion between pyrene and TCNQ in the solid state. The results provide evidence that CT‐based supramolecular electrets warrant applications in optoelectronic applications.

show abstract

Electret Molecular Configuration Induced Programmable Photonic Memory for Advanced Logic Operation and Data Encryption

Shen

Liang

Dong

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Nonvolatile organic photonic transistor (OPT) memories have attracted widespread attention due to their nondestructive readout, remote controllability, and robust tunability. Developing electrets with similar molecular structures but different memory behaviors and light‐responsive features is crucial for light‐wavelength‐modulated data encryption. However, reported OPT memories have yet to meet this challenge. Here a new electret molecule (“H‐PDI”) is developed via reconfiguring the linear perylene diimide molecule (“L‐PDI”) to a helical shape. Respectively incorporating H‐PDI and L‐PDI into the floating gate layer results to H‐PDI OPT and L‐PDI OPT. Attributing to their remarkably different electronic structures and energy bandgaps, H‐PDI OPT and L‐PDI OPT preferably respond to 405 and 532 nm light irradiation, respectively. Upon electrical programming, data can be written and stored in both memories with good retention features and a high “1”/“0” state current ratio over 105, though the data can only be erased by light with correct wavelengths, rather than the electrical field. Moreover, data stored in a memory array consisting of both H‐PDI OPT and L‐PDI OPT can only be read out by correct inputs, and wrong inputs will lead to highly deceptive outputs. This study provides a general design strategy of OPT for advanced data encryption and protection.

show abstract

Improving the performance of photonic transistor memory devices using conjugated block copolymers as a floating gate

Abstract: We report the synthesis, morphology and photo-memory device applications of a block copolymer (BCP) consisting of poly(9,9-dioctylfluorene) (PFO) and polystyrene (PS).

Cited by 35 publications

References 42 publications

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Multiband Photoresponding Field‐Effect Transistor Memory Using Conjugated Block Copolymers with Pendent Isoindigo Coils as a Polymer Electret

Highly Efficient Photo‐Induced Recovery Conferred Using Charge‐Transfer Supramolecular Electrets in Bistable Photonic Transistor Memory

Electret Molecular Configuration Induced Programmable Photonic Memory for Advanced Logic Operation and Data Encryption

Contact Info

Product

Resources

About