Improving the transconductance flatness of InAlN/GaN HEMT by modulating V<sub>T</sub> along the gate width

Mi, Min-Han; Wu, Sheng; Zhang, Meng; Yang, Ling; Hou, Bin; Zhao, Ziyue; Guo, Lixin; Zheng, Xuefeng; Ma, Xiaohua

doi:10.7567/1882-0786/ab48bf

Cited by 14 publications

(5 citation statements)

References 30 publications

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“…The large-signal linearity of the HEMT is significantly improved when the HEMT is passivated by TiO 2 . The improved device linearity of the TiO 2 -HEMT is attributed to increased g m,max [ 18 ] and GVS values [ 20 ].…”

Section: Resultsmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

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Section: Resultsmentioning

confidence: 99%

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Lin

2020

Micromachines

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“…Aside from these structures, nanochannel structures have attracted more attention because of the additional improvement in the electron velocity [ 14 ], self-heating effect [ 15 ], subthreshold swing [ 16 ], breakdown voltage [ 17 ] and so on. Moreover, a nanochannel structure can modulate the threshold voltage by varying the nanochannel width [ 18 ], which is also helpful for the improvement in linearity via threshold voltage synthesis and transconductance compensation [ 8 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

et al. 2023

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In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), current gain cut-off frequency (fT) and power gain cut-off frequency (fmax) of the TGN-devices were larger than that of the DGN-devices because of the enhanced gate control from the top gate. Although the TGN-devices and DGN-devices demonstrated flattened transconductance, fT and fmax profiles, the first and second transconductance derivatives of the DGN-devices were lower than those of the TGN-devices, implying an improvement in linearity. With the nanochannel width decreased, the peak value of the transconductance and the first and second transconductance derivatives increased, implying the predominant influence of sidewall gate capacitance on the transconductance and linearity. The comparison of gate capacitance for the TGN-devices and DGN-devices revealed that the gate capacitance of the tri-gate structure was not simply a linear superposition of the top planar gate capacitance and sidewall gate capacitance of the dual-gate structure, which could be attributed to the difference in the depletion region shape for tri-gate and dual-gate structures.

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“…GaN-based heterostructures with high-Al and thin barrier are desirable for the scale-down high-electron-mobility transistors (HEMTs), among which lattice-matched InAlN/GaN has attracted much attention for scale-down high frequency and low-voltage high efficiency applications. [1][2][3][4][5] However, low-resistance ohmic contact on high-Al-barrier heterostructures becomes a challenge. [6] This can cause high-frequency parasitic effects and drop of efficiency, which will be even much more serious for scale-down devices.…”

Section: Introductionmentioning

confidence: 99%

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

et al. 2023

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This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal-organic chemical vapor deposition (MOCVD) regrowth technique. The 150 nm regrown n+-InGaN exhibits a low sheet resistance of 31Ω/□, resulting in an extremely low contact resistance of 0.102Ω·mm between n+-InGaN and InAlN/GaN channel. Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts. Then, the diffusion mechanism between n+-InGaN and InAlN during regrowth process was investigated with electrical and structural characterization, which could benefit the further process optimization.

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Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

Cited by 14 publications

References 30 publications

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process

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Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width

Cited by 14 publications

References 30 publications

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

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Product

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Improving the transconductance flatness of InAlN/GaN HEMT by modulating V_T along the gate width

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process