Improving the visible-light photoresponse characteristics of a ZnO phototransistor <i>via</i> solution processable Li dopants

Jeong, Jun Hyung; Park, Sungho; Kim, Byung Jun; Heo, Su Been; Kim, Tae Yeon; Shin, Jae Seung; Yu, Jong Hun; Hyun, Jin Won; Kim, Min Gye; Kang, Seong Jun

doi:10.1039/d1tc02088a

Cited by 11 publications

(9 citation statements)

References 40 publications

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“…A similar analysis of the O1s peak measured on ZnO x films revealed a strong peak at 530.5 ± 0.2 eV and two distinct shoulders at 532.2 ± 0.2 and 532.8 ± 0.2 eV. [ 52,53 ] The peak at 530.5 ± 0.2 eV is associated with the ZnOZn from ZnO lattice. The peak at 532.2 can be attributed to the oxygen vacancies (Zn‐O vac ).…”

Section: Resultsmentioning

confidence: 72%

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Tang

Dacha

Haase

et al. 2022

Adv Funct Materials

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Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution bladecoating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO 2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm 2 V −1 s −1 , respectively. The devices show an excellent on/off ratio (>10 6 ), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlO x dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm 2 V −1 s −1 at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm 2 V −1 s −1 ) and IZI-TFTs (over 38 cm 2 V −1 s −1 ) using MO semiconductor layers annealed at 300 °C are achieved.

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Section: Resultsmentioning

confidence: 72%

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Tang

Dacha

Haase

et al. 2022

Adv Funct Materials

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“…In 2c). In this structure, the doped Au has oxidation state of +2 (5d 9 ) which is evidenced by a magnetic moment of 1 (table 1), spin density (transparent yellow) and mid gap in DOS profile (in figure 2c).…”

Section: Characteristics Of B Au Doped Zno Bilayer Filmsmentioning

confidence: 93%

“…A smaller oxidation state of Au in Au:ZnO/Cu(111) is accompanied with a completely quenching of magnetic moment (table 2 and figure 3d, 3e). This phenomenon is due to the charge transfer from Cu(111) support to doped Au which changed its oxidation state from Au +2 (5d 9 ) to Au +1 (5d 10 ), resulting in switching magnetic moment from +1 to 0 (see DOS profile in figure 2c and figure 3d, 3e). This observation is opposite to that B doped ZnO/Cu(111), where excess charge transfer to Cu support.…”

Section: Characteristics Of B Au Doped Zno Bilayer Filmsmentioning

confidence: 99%

“…[2,4,5] Among these methods, doping heteroatoms into the pure ZnO materials is frequently applied to obtain the desired characteristics in particular applications. For example, to obtain n-type ZnO materials applying in gas sensing, solar cells or panel displays, group-IIIA elements (B, Al, Ga, In) [6][7][8] was introduced into ZnO materials; to get p-type ZnO materials, group-IA elements (Li, K, Na) [9][10] were doped into ZnO materials which are appropriate for photoelectronic devices; to enhance applications in detecting volatile organic compounds, Au was doped in ZnO. This is due to Au doped ZnO reduce the band gap structure which enhances gases interactions.…”

Section: Introductionmentioning

confidence: 99%

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B and Au dopedZnOandZnO/Cu(111) bilayer films: ADFTinvestigation

Thang,

Tram,

Thong

et al. 2022

Vietnam Journal of Chemistry

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AbstractsThe structural and electronic properties of B and Au doped graphite‐like ZnO and ZnO/Cu(111) bilayer films have been investigated by using the DFT + U scheme including dispersion correction and compared to that of undoped materials. The differences in electronic properties of the B and Au doped ZnO and ZnO/Cu(111) films compared to undoped materials were probed by CO adsorption. The same oxidation state of B (+3) was observed for B doped ZnO and ZnO/Cu(111) bilayer films. However, an excess electron associated with B doping is delocalized over the conduction band of ZnO, while it transfers to underlying Cu support of ZnO/Cu(111). This is evidenced by a much large redshift of CO frequency on B doped ZnO versus the small redshift of CO frequency on B doped ZnO/Cu(111). At variance, the oxidation state of Au dopant was reduced from +2 (5d9) for Au doped ZnO to +1 (5d10) for Au doped ZnO/Cu(111) films. This is due to the charge transfer from Cu support to doped Au which results in the stronger binding of CO on Au doped ZnO/Cu(111) compared to ZnO bilayer films. However, a slight difference in CO frequency was found for CO bound to Au doped ZnO and ZnO/Cu(111).

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“…12,13 Also, it is widely known that the intrinsic defect states, such as oxygen vacancies, are the origin of n-type behavior of ZnO. 14,15 These defect states can absorb visible light wavelengths and generate photoexcited electrons as well. Therefore, it is possible to detect visible light by controlling these defect states inside ZnO.…”

Section: Introductionmentioning

confidence: 99%

Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al₂O₃ layer

et al. 2022

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Improving the visible-light photoresponse characteristics of a ZnO phototransistor via solution processable Li dopants

Abstract: The wide band gap of oxide semiconductors enables them to generate photocurrents through irradiation with high-energy photons, such as ultraviolet light. To enhance the photoresponsivity of an oxide semiconductor to...

Cited by 11 publications

References 40 publications

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

B and Au dopedZnOandZnO/Cu(111) bilayer films: ADFTinvestigation

Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al₂O₃ layer

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Improving the visible-light photoresponse characteristics of a ZnO phototransistor via solution processable Li dopants

Abstract: The wide band gap of oxide semiconductors enables them to generate photocurrents through irradiation with high-energy photons, such as ultraviolet light. To enhance the photoresponsivity of an oxide semiconductor to...

Cited by 11 publications

References 40 publications

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

Analysis of the Annealing Budget of Metal Oxide Thin‐Film Transistors Prepared by an Aqueous Blade‐Coating Process

B and Au dopedZnOandZnO/Cu(111) bilayer films: ADFTinvestigation

Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al2O3 layer

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Highly enhanced visible light photodetection properties of a ZnO phototransistor via an additional solution processed thin Al₂O₃ layer