κ, κ e , κ L , and T are the Seebeck coefficient, electrical conductivity, total thermal conductivity, electrical thermal conductivity, lattice thermal conductivity, and absolute working temperature, respectively. [1,2] Since α, σ, and κ are strongly coupled with each other, a simple improvement in single parameter usually results in a deterioration of the others. The challenge of realizing superior TE properties lies in the improvement of ZT, that is, simultaneously increasing in power factor (PF = α 2 σ) and suppressing κ. Normally, α enhancement can be achieved by a carrier energy filtering effect, caused by band bending at the nanointerfaces between nanoparticle and TE host materials. [2-4] Meanwhile, reducing κ L by phonon scattering is an effective way to reduce κ while maintaining a high σ. Very recently, lattice strains regulated by annealing time have also been observed for remarkably decreasing κ without affecting the carrier mobility (µ). [3] Sb 2 Te 3 and its derivatives are considered to be one of the best p-type TE materials near room temperature. [5] Compared with its bulk counterparts, nanostructured Sb 2 Te 3 film provides promising possibilities for enhanced TE properties and potential applications in micro/nanoelectromechanical systems (MEMS/NEMS) TE device. [6] Experimentally, Sb 2 Te 3 has been prepared by various approaches such as physical vapor deposition (PVD), solid state reaction, and chemical synthesis method and so on. [1,7,8] The effect of substrate, annealing temperature, and thickness on PF as well as the strain-and grain size-dependent κ in Sb 2 Te 3 films was studied. [9-11] PF can be enhanced by introducing nanoscale metal/semimetals into