Improving work function tuning by preimplanting multiple dopants in Ni fully silicided gate

Abstract

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Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics

“…The three key points for selection of gate electrode materials are work function, thermal stability, and lower resistivity. So far, many types of materials have been investigated to replace poly-silicon, such as pure metals [2][3][4][5][6], binary alloys [7][8][9][10], metal nitrides [11][12][13][14][15], metal carbides [16], and fully silicided Si (FUSI) [17][18][19][20]. Of these, the refractory transition metal nitrides are of interest owing to their good thermal stability, good oxygen diffusion barrier characteristics, and tunable work function.…”