Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field

Ghazi, Haddou El; Peter, A. John

doi:10.1016/j.ssc.2014.09.024

Cited by 15 publications

(5 citation statements)

References 17 publications

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“…[ 17–19 ] In particular, since the external electric field changes the symmetry of such structures, it has been subjected to more extensive research than other effects. [ 20–23 ]…”

Section: Introductionmentioning

confidence: 99%

“…[17][18][19] In particular, since the external electric field changes the symmetry of such structures, it has been subjected to more extensive research than other effects. [20][21][22][23] Under these external effects, it is possible to find many studies in which binding energy (E b ) and self-polarization (SP/e) calculations are made for the confinement electron, especially in QW1-doped semiconductors. [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43] Recently, the SP/e, which is defined as the influence of the well potential on the impurity atom has been studied for QW1 as a function of well width, external electric field, and the impurity position.…”

Section: Introductionmentioning

confidence: 99%

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Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Özkapı

Mese²,

Cicek³

et al. 2022

Physica Status Solidi (b)

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The effect of the external electric field on the ground state binding energy and self‐polarization of a hydrogenic donor impurity in quantum wells (QWs) made of different materials is calculated within the effective mass approximation using a variational scheme. The variations of binding energy and self‐polarization depending on well width, electric field, and impurity position have been studied in detail. For each QW made of different materials, it has been observed that the binding energy decreases with the increase of the electric field, whereas the self‐polarization increases. Also, it has been observed that InP/In1−x Ga x P has higher binding energy values among the structures discussed. It is seen that material selection has a noticeable effect on self‐polarization and binding energy in QW‐based structures.

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“…[ 17–19 ] In particular, since the external electric field changes the symmetry of such structures, it has been subjected to more extensive research than other effects. [ 20–23 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Özkapı

Mese²,

Cicek³

et al. 2022

Physica Status Solidi (b)

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“…Low-dimensional systems (LDS) based on single and multiple quantum well (SQW, MQW) quantum well wire (QWW) and quantum dot (QD) form a great domain for research both theoretically and experimentally [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. During the few last decades, IIInitrides semiconductor systems such AlN, GaN, (In,Ga)N and (Al,Ga)N have emerged as the adequate materials for applications such solar cell, laser, diode laser.…”

Section: Introductionmentioning

confidence: 99%

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

et al. 2020

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In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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“…This is in good agreement with the results of Refs. [6,12,13]. It can be also seen that the nonlinear term is more enhanced in the SCQW and then, it should be taken into account of its contribution especially for the experimental studies.…”

Section: Resultsmentioning

confidence: 99%

“…Ozturk and Sokmen [11] theoretically calculate the intersubband optical absorption in an asymmetric double quantum well * corresponding author; e-mail: hadghazi@gmail.com for dierent barrier widths and the right well widths. Chen et al [12] study the second harmonic generation in the asymmetric coupled quantum wells (ACQWs) theoretically for dierent widths of the right-well and the barrier. Recently, the optical properties of the asymmetric double semiparabolic quantum wells are investigated numerically for typical GaAs/Al x Ga 1−x As [13].…”

Section: Introductionmentioning

confidence: 99%

Impurity-Related Linear and Nonlinear Optical Absorption Coefficients of Unstrained (In,Ga)N-GaN Symmetric Coupled QWs

Ghazi

Peter

2015

Acta Phys. Pol. A

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Linear, third-order nonlinear and total optical absorption coecients associated with intra-conduction band in wurtzite unstrained (In,Ga)N-GaN coupled quantum wells are calculated. Based on the eective-mass and the one-band parabolic approximations, the well and the barrier-widths eects are investigated variationally under nite connement potential barrier. The results indicate that the structure size have a great inuence on the optical properties. The results reveal also that larger optical absorption coecients are obtained compared to single quantum well and a signicant red-shift is obtained as the structure size increases. It is found that the modulation of the absorption coecients can be easily obtained by adjusting the barrier and/or the well widths.

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Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field

Cited by 15 publications

References 17 publications

Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

Impurity-Related Linear and Nonlinear Optical Absorption Coefficients of Unstrained (In,Ga)N-GaN Symmetric Coupled QWs

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