Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lü, Na; Ferguson, Ian T.; Zhang, Yong

doi:10.1038/srep19537

Cited by 26 publications

(21 citation statements)

References 35 publications

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“…Recently, metal-semiconductor (M-S) junction has been used to alleviate the problem of p-type doping 60,61 in GaN and InGaN layers, in which the rectifying Schottky junction between NiAu and InGaN causes the photo-generated current to flow throughout the fabricated device. 45 However, considerable work needs to be done for improving the performance of such Schottky solar cells.…”

Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Solar Cellsmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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“…In recent years, enormous attention and research enthusiasm have been devoted to high dielectric (high-k) materials for their wide applications in actuators [1,2], antennas [3], capacitors [4][5][6][7], wave-transparent (or absorbing) devices [8][9][10][11][12][13], and other electronic devices [14][15][16][17][18][19][20][21][22]. Most conventional highk materials are ceramic or ceramic composites, but their applications are seriously restricted by their intrinsic frangibility, high density, poor plasticity, and low breakdown strength.…”

Section: Introductionmentioning

confidence: 99%

Improved dielectric permittivity and retained low loss in layer-structured films via controlling interfaces

Mao

Shi

Wang

et al. 2018

Adv Compos Hybrid Mater

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The search for high-performance dielectric materials has long been driven by the urgent needs for various modern electronics. However, enhanced permittivity is always accompanied by elevated loss, which seriously hinders the development and applications of dielectric materials. Herein, negative-k layers were introduced into layer-structured films, forming a new class of multilayer composites consisting of alternately stacked positive-k and negative-k layers. Compared with traditional multilayer composites without negative-k layers, the layered composites containing extra positive-k/negative-k interfaces exhibit superior ability in balancing the contradict parameters: permittivity and loss, yielding substantially enhanced permittivity without sacrificing the low loss. It is indicated that the permittivity was enhanced by the charge accumulations and reinforced polarizations on the interfaces between positive-k and negative-k layers. Meanwhile, the loss induced by the leakage current was suppressed by the blocked transport of carriers between adjacent layers. The trilayered 60-3.5-60 composite exhibits an enhanced dielectric constant (ε′ ≈ 33 @10 kHz) and retained low loss (tanδ ≈ 0.12 @10 kHz) compared with the single-layer BT/PVA composite containing 60 wt% BT fillers (ε′ ≈ 9.5 @10 kHz, tanδ ≈ 0.075 @10 kHz). This research offers an effective way to design and fabricate novel high-performance dielectric materials.

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“…TE Properties of Nitrides MaterialsIII-nitrides are used in a wide variety of applications, such as lightemitting diodes (LEDs), optical and electronic devices, and 22 ultraviolet (UV) detectors. These materials are considered for TE applications for a variety of reasons, including low material cost, high thermal stability, high mechanical strength, and radiation55,56 …”

mentioning

confidence: 99%

Advanced Metal Oxides and Nitrides Thermoelectric Materials for Energy Harvesting

Feng¹,

Witkoske²,

Bell³

et al. 2018

ES Mater.Manuf.

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View Article Online Metal oxides and nitrides are widely used in many applications as a result of their high mechanical, chemical, and electrical properties. In high temperature thermoelectric applications, oxides and nitrides exhibit high thermopower and thermal stability. Moreover, most oxides and nitrides are consisted of earth abundant elements, which are non-toxic, cost effective and easy for large-scale synthesis. In this article, we reviewed the recent advances of metal oxides and nitrides and their applications in thermoelectrics. The materials that are examined include both p-type semiconductors (e.g. Na CoO , Ca Co O , GaN) and n-type semiconductors (e.g. ZnO-based, SrTiO , InGaN, InN). x 2 3 4 9 3 This study is focused on the temperature dependent thermoelectric transport properties of oxides and nitrides aiming for reaching a high power factor.

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Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Cited by 26 publications

References 35 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Improved dielectric permittivity and retained low loss in layer-structured films via controlling interfaces

Advanced Metal Oxides and Nitrides Thermoelectric Materials for Energy Harvesting

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