Impurity states in the narrow band-gap semiconductor n-type InSb

Silva, A. Ferreira da; Dantas, Nilton Souza; Mota, F.; Canuto, Sylvio; Fazzio, A.

doi:10.1016/0038-1098(96)80022-6

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2022

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“…These indirect transitions and Urbach tail features can be caused by the presence of disordered and/or impurity states causing energy gap transitions, likely caused by surface related absorption. 83,84 As such, Li/Na depletion at both the exposed surface and LLO interface of NVP/LVP coatings is at least partially responsible for lowering the CBM of NVP/LVP-LLO in comparison to PR-LLO. Despite this, the alterations in the electronic band structure of Li-rich layered oxide by VP coating proved benecial in both theory and practice.…”

Section: Discussionmentioning

confidence: 99%