In-Line Automatic Photoresist Process Control

Lauchlan, L.; Sautter, Kenneth; Batchelder, Thomas W.; Irwin, J. David

doi:10.1117/12.947837

Cited by 10 publications

(11 citation statements)

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“…avg coef mag(j) < avg coef mag(tSTART)'drop (5) Where t = a time several seconds after the START first voltage sample is obtained. drop = fraction of initial value.…”

Section: (2)mentioning

confidence: 99%

Automatic Linewidth Control System

Uhler

1987

SPIE Proceedings

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A system used to provide linewidth control in a IC manufacturing facility is described. It combines the use of interferometry, real time endpoint detection, and automation to tighten linewidth distributions by adjusting development times.The use of Fourier Transforms provide consistent endpoint detection for a variety of part, process, and substrate types.The system increases throughput and reduces rework by eliminating the need for trial wafers.It also provides a means for process monitoring as well as a tool for troubleshooting, and process development.

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“…avg coef mag(j) < avg coef mag(tSTART)'drop (5) Where t = a time several seconds after the START first voltage sample is obtained. drop = fraction of initial value.…”

Section: (2)mentioning

confidence: 99%

Automatic Linewidth Control System

Uhler

1987

SPIE Proceedings

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“…where to is the breakthrough time, and r is the etch rate. The breakthrough time, to, is detected using optical interferometry (Lauchlan et al, 1985;Carroll, 1990).…”

Section: Optimal Open-width Design Principlementioning

confidence: 99%

“…Four nonlinear process variables of a dry-etch process were adaptively controlled with a recursive least-squares estimation method combined with a deadbeat controller. Although neither the bottom linewidth nor the side-wall curvature were among those four controlled variables, the impact of this research is significant.Direct bottom linewidth control in lithography was made by Lauchlan et al (1985) for photoresist development. Optical interferometry was used to measure the film thickness in real time.…”

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confidence: 99%

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Simultaneous optimal bottom linewidth and side‐wall curvature control of wet etching

Zhou

Ramirez

1996

AIChE Journal

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“…Endpoint detection of photoresist development based on optical monitoring of thickness has been effective for over a decade [1,8,9], but this measurement still requires that the development solution be transparent to the incident light. The technique described here provides information on the studied film' s elastic properties and thickness and, since it is based on ultrasonic technology, it does not depend on optical transparency of the measurement environment.…”

Section: Introductionmentioning

confidence: 99%

Ultrasonic monitoring of photoresist processing

1999

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A high frequency ultrasonic technique has been developed to monitor photoresist processing in situ during semiconductor manufacturing. Photoresist pre-exposure bake and development have been monitored using the sensor, and the post-exposure bake has been studied as well. The in situ glass transition temperature (Tg ) was determined during the prebake for I-line films down to O.6im as well as for chemically-amplified DUV resists of similar thicknesses. Using classical reflection theory, photoresist properties such as the density, thickness, and acoustic velocity were determined during processing. This in situ parameter inversion method can be used to determine process endpoint if the optimal density, velocity, and thickness are predetermined. The Tg for post-exposure bake of Iline resists is expected to be the Tg of the novolac resin alone, without solvent present. Measurements using the described sensor have confirmed that the resin Tg during postbake is 1 18CC, the value of Tg provided by Shipley. This provides a measurement of postbake as well as a confirmation that the sensor is measuring Tg accurately. The development process was also monitored using this sensor. Results prove the usefulness of this sensor for in situ measurement of resist thickness changes during development. This was verified for different exposure doses and for resist coated on a wafer with circuit topography.

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In-Line Automatic Photoresist Process Control

Cited by 10 publications

References 0 publications

Automatic Linewidth Control System

Automatic Linewidth Control System

Simultaneous optimal bottom linewidth and side‐wall curvature control of wet etching

Ultrasonic monitoring of photoresist processing

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