In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beam

Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

“…However, doping of Ge nanowires has been successfully achieved using CVD methods 131 . Another advantage is that MBE is often combined with the use of epitaxial growth on various substrates 53,54 , offering the ability to produce highly uniform growth orientations. One possible disadvantage of the MBE technique is the small aspect ratio of Ge nanowires which is a result of the limited growth velocity 54 .…”

“…Another advantage is that MBE is often combined with the use of epitaxial growth on various substrates 53,54 , offering the ability to produce highly uniform growth orientations. One possible disadvantage of the MBE technique is the small aspect ratio of Ge nanowires which is a result of the limited growth velocity 54 . This problem could be circumvented if MBE was combined with the pre-patterning of small monodisperse seeds.…”

“…Vapour and liquid-based growth of Ge nanowires consists of any method where the Ge precursor is in either vapour and liquid form and include techniques such as chemical vapour deposition (CVD) [45][46][47][48][49][50] , metal-organic chemical vapour deposition (MOCVD) 51 52 , molecular beam epitaxy [53][54][55] , template methods 56,57 and various evaporation methods such as electron beam evaporation 58,59 and thermal evaporation 60,61 . Alternatively, liquid/solution (see figure 1) 14,52,[62][63][64][65][66][67] and SCF [68][69][70][71][72] based methods involve the introduction of precursors in liquid and supercritical media respectively.…”

“…Molecular beam epitaxy (MBE) has also been used to control the growth direction of Ge nanowires with great success 53,54 . MBE is an excellent technique for producing nanowires as it offers ultra-high vacuum conditions (often as high as ~10 -13 bar), precise control over morphology and composition and abrupt interfaces when compound semiconductor nanowires are synthesised.…”

Influence of composition and substrate miscut on the evolution of {105}-terminated in-plane Si1−xGex quantum wires on Si(001)

“…[14][15][16] For carrier transport, however, one-dimensional (1D) SiGe quantum wires (QWs) could be even more attractive. Such QWs are mainly fabricated by a catalytic solid-liquid-solid growth technique, 17 which leads in most cases 18 to free-standing wires that grow under an angle to the Si substrate. [19][20][21] Since standard technologies for large-scale Si device integration rely on planar processes, and, moreover, are incompatible with transition metal catalysts, in-plane QWs fabricated by a catalyst-free technique on Si(001) substrates are highly desirable.…”