In-rich (4×2) and (2×4) reconstructions of the InAs(001) surface

Miwa, R. H.; Miotto, R.; Ferraz, A. C.

doi:10.1016/s0039-6028(03)00955-5

Cited by 31 publications

(36 citation statements)

References 32 publications

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“…We note that Miwa et al obtained that the reconstruction is stable for the InAs using pseudopotentials. 28 To get a wider view of the considered phenomena, Fig. 4͑c͒ shows the surface-energy difference between the and a for cases in which only two adsorbate cation atoms occupy the atomic sites 4 and 4Ј on GaAs.…”

Section: Resultsmentioning

confidence: 99%

“…33 However, according to Miwa et al, only the phase is energetically stable for InAs ͑as for GaAs͒. 28 In this paper, we report the energetic stability of a structures, with varying amounts of In on the In/ GaAs͑100͒c ͑8 ϫ 2͒ surface by ab initio total-energy calculations. The comparison of the calculated STM images for various c͑8 ϫ 2͒ models with the former 35 and present measured images of In/ GaAs͑100͒c͑8 ϫ 2͒ supports the presence of these stable a reconstructions.…”

Section: Introductionmentioning

confidence: 85%

“…In general, the c͑8 ϫ 2͒ surfaces have been found to be composed of unique structural units, [25][26][27][28][29][30][31][32][33][34] which include dimers in the subsurface rather than top layer ͑Fig. 1͒.…”

Section: Introductionmentioning

confidence: 99%

“…26,27 Miwa et al considered an atomic structure "a," which is an ordered variant of the atomic model introduced by Kumpf et al including only those local configurations which were excluded in the original atomic structure. 28 Therefore, the and a atomic models include 0% ͑for ͒ and 100% ͑for a͒ occupations for the monomer rows marked by an arrow and shown in Figs. 1͑a͒ and 1͑d͒.…”

Section: Introductionmentioning

confidence: 99%

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Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure

et al. 2010

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Technologically useful indium-͑In͒ terminated c͑8 ϫ 2͒-reconstructed GaAs͑100͒ substrate surface has been studied by first-principles calculations and scanning tunneling microscopy ͑STM͒ measurements. Our totalenergy calculations demonstrate the stability of four different so-called a structures with In monomer rows and In coverage between 0.5 and 2 monolayers on the GaAs͑100͒ substrate. Thus, we introduce a surface system, which stabilizes the a reconstruction. Furthermore, an interesting trend is found. Atomic structure of the c͑8 ϫ 2͒ reconstruction depends on the surface-layer cation and substrate volumes, which, in principle, allows to tune the surface structure by cation adsorption. This phenomenon is related to the peculiar c͑8 ϫ 2͒ atomic surface structure, which shows mixed surface layer, including both anions and cations, and uncommon metallic-type cations in the a structure, which do not show covalent bonds. Our results predict a structural transition from the structure to the a structure as the surface cation size is increased at 0 K. The found transition is probably related to the disordered surface structures ͑consisting of and a building blocks͒ found experimentally by x-ray diffraction at room temperature. Comparison of the STM images, calculated for various c͑8 ϫ 2͒ models, with the former and present measured STM images of In/ GaAs͑100͒c͑8 ϫ 2͒ supports the presence of stable a reconstructions.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure

et al. 2010

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“…Only the ␣2͑2 ϫ 4͒ and ␤2͑2 ϫ 4͒ reconstructions have been experimentally observed by scanning tunnel microscopy ͑STM͒ on InAs͑001͒, 6 but we also consider the possibility of the ␣3͑2 ϫ 4͒ due to its predicted low formation energy. 4,7 The ␤2͑2 ϫ 4͒ structure has two As dimers in the top layer, six In atoms that bridge the As dimers in the second layer, and an As dimer in the third layer that is often termed the "trench dimer." The ␣2͑2 ϫ 4͒ model is missing one of the As top dimers from the ␤2͑2 ϫ 4͒ model, and four of the underlying six In atoms form two In dimers.…”

Section: Introductionmentioning

confidence: 99%

As-rich InAs(001)-(2×4) phases investigated by in situ surface x-ray diffraction

Tinkham

Braun

Takahasi

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Surface x-ray diffraction has been employed, in situ, to measure InAs(001)-(2×4) surface phases under technologically relevant growth conditions. For the As-rich (2×4) phase, the authors obtain good agreement between the data and the β2(2×4) surface reconstruction model. Comparison of our measurements on the (2×4) phase measured close to the metal-rich phase transition to models from density functional theory suggests a mixture of α2(2×4) and β2(2×4) surface structures present on the surface.

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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In-rich (4×2) and (2×4) reconstructions of the InAs(001) surface

Cited by 31 publications

References 32 publications

Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure

Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure

As-rich InAs(001)-(2×4) phases investigated by in situ surface x-ray diffraction

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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