2001
DOI: 10.1017/s1431927600028506
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In SEM Study of Physical Properties of Semiconductor by Surface Electron Beam Exciting Potential

Abstract: In this paper, we apply a novel contactless method that we study to investigate the physical properties of the semiconductor materials. This method is based upon the measurement of the surface electron beam exciting potential (SEBEP) on the sample surface. Its advantages include: no direct sample contact or connection needed that is unlike the electron beam inducing current (EBIC) method; no potential barrier required from the measurement.Electron probe irradiation can cause bending o… Show more

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