This work demonstrates the benefit of the thermal wave method for the evaluation of the polarization state of embedded piezoelectrics. Two types of samples were investigated: A low-temperature co-fired ceramics (LTCC)/lead zirconate titanate (PZT) sensor-actuator and a macro-fiber composite (MFC) actuator. At modulation frequencies below 10 Hz, the pyroelectric response was governed by thermal losses to the embedding layers. Here, the sample behavior was described by a harmonically heated piezoelectric plate exhibiting heat losses to the environment characterized by a single thermal relaxation time.

This work demonstrates the benefit of the thermal wave method for the evaluation of the polarization state and the polarization profile, respectively, of embedded piezoelectrics. Two types of samples were investigated: A Low Temperature Cofired Ceramics (L TCC)/PZT sensor-actuator and a Macro Fiber Composite (MFC) actuator. At modulation frequencies below 10 Hz, the pyroelectric response was governed by thermal losses to the embedding layers. Here, the sample behavior was described by a harmonically heated piezoelectric plate exhibiting heat losses to the environment characterized by a thermal relaxation time.

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In the paper, we firstly publish a new method of internal micrographic visualization of semiconductor and IC. The quality and reliability of the semiconductor materials (SM) and the integrated circuits (IC) have always been concerned Having a high resolution, high reliable and nondestructive detection method is the key element for their improvements.Silicon oxide layers are used to provide the electrical insulation in the multi-structured ICs. The IC device surfaces are often protected by silicon oxide and silicon nitride layers. Therefore, these insulation layers also cover any inhomogeneity and defect located within the IC devices. It is necessary to have an examining method to detect those defects that are under the insulation layers without damaging the samples. However, the conventional scanning electron microscope (SEM) cannot be utilized to image and examine the surfaces that are positioned below the insulation layers.Novel nondestructive and contactless method has been developed in our laboratory to obtain the internal micrograph that crosses the surface of the semiconductor material and the integrated circuit.

In this paper, we apply a novel contactless method that we study to investigate the physical properties of the semiconductor materials. This method is based upon the measurement of the surface electron beam exciting potential (SEBEP) on the sample surface. Its advantages include: no direct sample contact or connection needed that is unlike the electron beam inducing current (EBIC) method; no potential barrier required from the measurement.Electron probe irradiation can cause bending of the energy bands, variation of carriers and excitation of surface potential. The excited surface potential generates the SEBEP signal that can be detected by a SEBEP detector. It is necessary to emphasize that the electron beam can charge the surface that is under the oxide layer when it passes through the sample surface oxide layer.It is known that the diffusion length L and the average lifetime τ of the non-equilibrium carries can be measured by other methods such as the cathodoluminescent method and the contacting method..