In situ bulk lifetime measurement on silicon with a chemically passivated surface

Horányi, T.S.; Pavelka, T.; Tüttö, P.

doi:10.1016/0169-4332(93)90112-o

Cited by 176 publications

(93 citation statements)

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“…This behavior is consistent with the known energetics of Si/liquid contacts, 9 and explains the low effective surface recombination velocity values measured for these n-type Si/liquid contacts using photoconductivity charge carrier decay methods. [1][2][3][4][5][6][7] Removal of the n-type Si surfaces from these electrolyte solutions eliminates the inversion layer, increases the effective surface recombination velocity to values in excess of 1ϫ10 3 cm s Ϫ1 , and produces values of S that are different for all of these chemically different surfaces.…”

Section: 13mentioning

confidence: 99%

“…[3][4][5][6][7] The effective surface recombination velocity of Si in contact with tetrahydrofuran ͑THF͒ solutions containing either I 2 or Fc ϩ/0 is also quite low, [3][4][5][6] even though these electrolytes do not produce surficial Si-alkoxide groups. 1,2 This behavior was previously ascribed to the formation of an inversion layer at the n-type Si surface, which produces low effective surface recombination velocities for a wide range of actual carrier trap densities at the n-Si/liquid interface.…”

mentioning

confidence: 99%

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Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

Michalak

Lewis

2002

Applied Physics Letters

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Near-surface channel conductance measurements, differential capacitance versus potential measurements, and surface recombination velocity measurements have been performed on ͑111͒-and ͑100͒-oriented n-type Si samples in contact with nitrogen and/or liquid electrolyte solutions containing I 2 , I 2 /I Ϫ , ferrocene, or decamethylferrocene ϩ/0 in either methanol or tetrahydrofuran. Si/liquid contacts that displayed a low effective surface recombination velocity S corresponded to those that formed an inversion layer at the solid/liquid contact as indicated by channel conductance measurements or by differential capacitance versus potential measurements. Contacts that did not produce an inversion layer at the Si surface did not produce low effective S values. The observed behavior is consistent with the known energetics of Si/liquid contacts and provides an explanation for the low effective S values observed in these systems.

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Section: 13mentioning

confidence: 99%

mentioning

confidence: 99%

Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

Michalak

Lewis

2002

Applied Physics Letters

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“…negligible, surface recombination velocity. [8][9][10][11][12] Measurements of high bulk lifetimes in this case rely critically on the validity of this assumption. To assess the surface recombination velocity (S) a substrate with very high bulk lifetime can be used, making surface recombination the dominant recombination path.…”

Section: Simultaneous Mapping Of Bulk and Surface Recombination In Simentioning

confidence: 99%

Simultaneous mapping of bulk and surface recombination in silicon

Ostendorf

Endrös

1997

Applied Physics Letters

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“…Samples were measured while surface-passivated with an iodine ethanol solution described in Ref. 53.…”

Section: Other Characterization Techniquesmentioning

confidence: 99%

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Ganapati

Schoenfelder

Castellanos

et al. 2010

Journal of Applied Physics

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This manuscript concerns the application of infrared birefringence imaging ͑IBI͒ to quantify macroscopic and microscopic internal stresses in multicrystalline silicon ͑mc-Si͒ solar cell materials. We review progress to date, and advance four closely related topics. ͑1͒ We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. ͑2͒ We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: ␤-SiC and ␤-Si 3 N 4 microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. ͑3͒ We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. ͑4͒ We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

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In situ bulk lifetime measurement on silicon with a chemically passivated surface

Cited by 176 publications

References 5 publications

Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

Simultaneous mapping of bulk and surface recombination in silicon

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

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