In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects

Yang, Chih‐Chao; Li, B.; Shobha, H.; Nguyen, S.; Grill, A.; Ye, W.; AuBuchon, Joseph F.; Shek, M.; Edelstein, D.

doi:10.1109/led.2012.2183850

Cited by 21 publications

(16 citation statements)

References 6 publications

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“…1,2 The effectiveness of a cap layer between the low-k dielectric and the Cu interconnect in reducing EM has been evaluated. [1][2][3][4][5] Among the different cap materials investigated, Co has been reported to be effective. 1,2 Similarly, Co serves as a potential diffusion barrier layer material in flip chip packaging for Cu/low-k chips, in which the exposed material at the bonding pad is Cu.…”

Section: Introductionmentioning

confidence: 99%

Cross-Interaction in Cu/Sn/Co/Sn/Ni and Cu/Sn–Co/Co/Sn– Co/Ni Couples

Chen

Tseng

2015

Journal of Elec Materi

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In this study we examined cross-interactions of Cu/Co and Co/Ni by use of Cu/ Sn/Co/Sn/Ni and Cu/Sn-0.04 wt.% Co/Co/Sn-0.04 wt.% Co/Ni couples. In the Cu/Sn/Co couple, Cu can diffuse through the pure Sn solder, and the (Cu, Co) 6 Sn 5 phase is formed at the Co side. The rate of consumption of Co decreases in the presence of Cu. Adding 0.04 wt.% Co to the pure Sn solder blocks diffusion of Cu; the (Cu, Co) 6 Sn 5 phase at the Co side is not observed, and the rate of Co consumption is increased. In the Co/Sn/Ni couple, no noticeable Co and Ni diffusion is observed. When 0.04 wt.% Co is added, the ternary (Ni, Co)Sn 4 phase is formed at the Ni side. These results indicate Co is an effective barrier to diffusion of Cu which can be used in flip chip packaging of Cu/low-k chips.

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Section: Introductionmentioning

confidence: 99%

Cross-Interaction in Cu/Sn/Co/Sn/Ni and Cu/Sn–Co/Co/Sn– Co/Ni Couples

Chen

Tseng

2015

Journal of Elec Materi

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“…However, this film has poor interface properties between nitride film and silicon substrate such as a high trap density, so leakage current has not been improved to the satisfied level. [1] In order to solve this problem, the oxynitride film was introduced to gate dielectric film, which has better interfacial properties. However, this oxynitride film also has some disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Interface characterization of nitrogen plasma‐treated gate oxide film formed by RTP technology

Choi

Park

2014

Surface & Interface Analysis

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We described thin nitrogen plasma-treated gate oxide film formed by rapid thermal process technology. This thin nitrogen plasma-treated gate oxide film has been formed using remote plasma nitridation process onto in situ steam generated oxide layer. We investigated the nitrogen profile within the gate dielectric film formed by this technique using SIMS analysis. The result shows that nitrogen concentration profile is composed of high at top surface and low at SiO 2 /Si interface. The peak concentration of nitrogen is placed at near top place and goes rapidly down to SiO 2 /Si interface. This nitrogen profile results in excellent boron diffusion barrier characteristics and superior interface properties for p+PMOSFET. We also performed the electrical analysis such as capacitance-voltage (C-V), gate leakage current, dielectric breakdown voltage and time-to-breakdown (TBD) measurement. It has been found that this thin nitrogen plasma-treated gate oxide film results in superior electrical reliability having significant lower leakage current, superior dielectric strength and outstanding TBD.

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“…Metallic thin films of the first row transition metal elements copper, nickel, cobalt, iron, manganese, and chromium have many important current and future applications. These include copper interconnects in microelectronics devices, − chromium, cobalt, and other metal seed layers for copper metallization, − cobalt capping layers for copper lines, manganese- and chromium-based copper diffusion barriers, − magnetic metals such as nickel, cobalt, and iron for magnetoresistive random access memory devices, catalytic applications, and cobalt, nickel, cobalt silicide, and nickel silicide for contact materials in microelectronics devices . Many of these applications are required for advanced microelectronics devices .…”

Section: Introductionmentioning

confidence: 99%

“…The hydrazonate ligand precursors L 2 H−L 4 H (Chart 1) were synthesized and characterized as described in the Experimental Section upon treatment of tertbutyl glyoxal, isopropyl glyoxal, or 2,3-butanedione with tertbutyl hydrazine hydrochloride and potassium hydroxide. The potassium salts KL 2 −KL 4 were prepared by treatment of L 2 H− L 4 H with KH in tetrahydrofuran, and these solutions were then treated directly with anhydrous MCl 2 (M = Ni, Co, Fe, Mn, Cr,) as depicted in eq 1 to afford complexes 1−11 as crystalline solids in the indicated yields upon sublimation between 100 and 135 °C at 0.05 Torr. Similar treatment of MnCl 2 and CrCl 2 with KL 3 afforded products in very low yields, and isolable products were not obtained upon treatment of these chlorides with KL 4 .…”

Section: ■ Introductionmentioning

confidence: 99%

Synthesis, Structure, and Solution Reduction Reactions of Volatile and Thermally Stable Mid to Late First Row Transition Metal Complexes Containing Hydrazonate Ligands

et al. 2013

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Treatment of MCl2 (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the hydrazonate salts K(tBuNNCHCtBuO), K(tBuNNCHCiPrO), or K(tBuNNCMeCMeO) afforded the complexes M(tBuNNCHCtBuO)2 (M = Ni, 65%; Co, 80%; Fe, 83%; Mn, 68%; Cr, 64%), M(tBuNNCHCiPrO)2 (M = Ni, 63%; Co, 86%; Fe, 75%), and M(tBuNNCMeCMeO)2 (M = Ni, 34%; Co, 29%; Fe, 27%). Crystal structure determinations of Co(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2 (M = Ni, Co), and M(tBuNNCMeCMeO)2 (M = Ni, Co, Fe) revealed monomeric complexes with tetrahedral geometries about the metal centers. To evaluate the potential of these new complexes as film growth precursors, preparative sublimations, thermogravimetric analyses, solid state decomposition studies, and solution reactions with reducing coreagents were carried out. M(tBuNNCHCtBuO)2 sublime between 120 and 135 °C at 0.05 Torr, whereas M(tBuNNCHCiPrO)2 and M(tBuNNCMeCMeO)2 sublime between 100 and 105 °C at the same pressure. All complexes afforded ≥96% recovery of sublimed material, with ≤3% of nonvolatile residues. The solid state decomposition temperatures were highest for M(tBuNNCHCiPrO)2 (273-308 °C), intermediate for M(tBuNNCHCtBuO)2 (241-278 °C), and lowest for M(tBuNNCMeCMeO)2 (235-250 °C). Treatment of Co(tBuNNCHCtBuO)2 in tetrahydrofuran with hydrazine, BH3(L) (L = NHMe2, SMe2, THF), pinacol borane, and LiAlH4 led to rapid formation of cobalt metal, while analogous reductions of Mn(tBuNNCHCtBuO)2 with BH3(THF), pinacol borane, and LiAlH4 appeared to afford manganese metal. The new complexes M(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2, and M(tBuNNCMeCMeO)2 have very promising properties for use as precursors for the growth of the respective metals in atomic layer deposition film growth processes.

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In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects

Cited by 21 publications

References 6 publications

Cross-Interaction in Cu/Sn/Co/Sn/Ni and Cu/Sn–Co/Co/Sn– Co/Ni Couples

Cross-Interaction in Cu/Sn/Co/Sn/Ni and Cu/Sn–Co/Co/Sn– Co/Ni Couples

Interface characterization of nitrogen plasma‐treated gate oxide film formed by RTP technology

Synthesis, Structure, and Solution Reduction Reactions of Volatile and Thermally Stable Mid to Late First Row Transition Metal Complexes Containing Hydrazonate Ligands

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