In-Situ Deposition of C-Axis Oriented Barium Ferrite Films for Microwave Applications

Mohebbi, Marjan; Ebnabbasi, Khabat; Vittoria, C.

doi:10.1109/tmag.2013.2250491

Cited by 18 publications

(11 citation statements)

References 10 publications

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“…In order to shift natural resonance frequency of BaM with L~X band, Fe 3+ ion located at 2b and 4f 2 …”

Section: Discussionmentioning

confidence: 99%

“…BaFe 12 2 Cu) were used as starting materials. They were mixed by stoichiometric ratio in deionized water (D.I), and then citric acid and ethylene glycol were added to the mixture.…”

Section: Methodsmentioning

confidence: 99%

“…Ferrite has a different structure and different natural resonance frequency due to its composition and additive elements. BaFe 12 O 19 has wave absorption band of several gigahertz, as it has high coercive force and high magnetic anisotropy [2] by the Fe 3+ ion on the 2b, 4f 2 site in its magnetoplumbite structure. ion on the ferrite structure [3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Substituted Elements on Reflection Loss of Ba-Ferrite Nanoparticle

Yang

Jeong

Park

et al. 2017

Archives of Metallurgy and Materials

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Due to the rapid development of the information communication industries, it is expected that next-generation mobile communication devices in the data communication environment will be used at the same time in the L~X band (1-12 GHz). To mutual electric wave interference prevention, research on wave absorbers in L~X band is needed. In this paper, barium ferrite was researched as L~X band wave absorber. The Barium ferrite (BaM, Ba ferrite) substituted by divalent ions (Co ). The substituted Ba ferrite nanoparticles were fabricated by sol-gel process. Lattice parameter, particle size, magnetic properties, and reflection loss were analyzed by X-ray diffraction (X-RD), a Vibrating Sample Magnetometer (VSM), and a Network Analyzer. Lattice parameter of Ba ferrite was changed 0.0005 to 0.0078 Å in a-b direction, and 0.0187 to0.0445 Å in c-direction by substituted elements, and it influenced on magnetic anisotropy. In addition, Co-Ti substitution elements influenced that coercive force decrease 5,739 to 2,240 Oe. Moreover, reflection loss frequencies were shifted from 16.3 GHz to 14.4 and 17.4 GHz by substituted elements Co-Ti and Zn-Ti.

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“…In order to shift natural resonance frequency of BaM with L~X band, Fe 3+ ion located at 2b and 4f 2 …”

Section: Discussionmentioning

confidence: 99%

“…BaFe 12 2 Cu) were used as starting materials. They were mixed by stoichiometric ratio in deionized water (D.I), and then citric acid and ethylene glycol were added to the mixture.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of Substituted Elements on Reflection Loss of Ba-Ferrite Nanoparticle

Yang

Jeong

Park

et al. 2017

Archives of Metallurgy and Materials

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“…In addition, they also belong to space group P63/mmc ferromagnetic ceramic material with easy magnetization along C-axis. [1][2][3][4][5] In the present work, we have demonstrated the spintronic application of Barium Hexaferrite (BaM) thin film deposited on Au coated Si substrate. I-V (current-voltage) characteristics of the device were measured in both the forward bias state, where the Au acts as a positive and BaM acts as a negative bias, and in the reversed biased state, where the roles of Au and BaM are reversed.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

Kaur

Sharma

et al. 2016

AIP Advances

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Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

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“…[1][2][3][4][5] It can display electric polarization induced by an applied magnetic field or conversely magnetization induced by an applied electric field, which has been observed in single phase or layer materials. [6][7][8][9][10] As the ME effect of single phase materials is weak and mostly only appears at low temperature, ME composites have drawn more attention because of their tremendous ME voltage coefficients at room temperature. [11][12][13][14] In ME composites, an external magnetic field applied to the magnetostrictive phase lead to a elastic deformation by means of magnetostriction, then the strain is transmitted to the piezoelectric phase and resulting in an induced charge output due to the piezoelectric effect.…”

mentioning

confidence: 99%

NiCo-lead zirconium titanate-NiCo trilayered magnetoelectric composites prepared by electroless deposition

Zhou

Fan

Zhao³

et al. 2015

AIP Advances

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The NiCo layers with various Ni/Co atomic ratio have been successfully electroless deposited on PZT layers by varying the bath composition. As the cobalt atomic ratio in the deposited layer increases from 17.2 to 54.8 wt%, the magnetostrictive coefficient decreases. The magnetoelectric effect depends strongly on the magnetostrictive properties of magnetostrictive phase. The magnetoelectric coefficient of NiCo/PZT/NiCo trilayers increases with Ni/Co atomic ratio of the deposited NiCo layers increasing from 45:55 to 83:17. A maximum ME voltage coefficient of αE,31 = 2.8 V ⋅ cm−1 ⋅ Oe−1 is obtained at a frequency of about 88 kHz, which makes these trilayers suitable for applications in actuators, transducers and sensors.

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In-Situ Deposition of C-Axis Oriented Barium Ferrite Films for Microwave Applications

Cited by 18 publications

References 10 publications

Influence of Substituted Elements on Reflection Loss of Ba-Ferrite Nanoparticle

Influence of Substituted Elements on Reflection Loss of Ba-Ferrite Nanoparticle

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NiCo-lead zirconium titanate-NiCo trilayered magnetoelectric composites prepared by electroless deposition

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