In situ detection of F2 laser-induced oxidation on hydrogen-terminated Si(111) and Si(110) surfaces by Fourier transform infrared transmission spectroscopy

Lambers, Jochen; Hess, Peter

doi:10.1016/s0040-6090(01)01471-7

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…Depending on the relative work function of the metal and the electron affinity of the semiconductor, it is well known that ohmic contacts are formed on n-type H-Si and Schottky diodes are formed on p-type H-Si. [34][35][36][37] Experimentally, the values of the effective barrier height ( b ) and of empirical ideality factors (n) can be determined from a semilog plot of J vs. V in the forward bias region, according to the classical thermionic emission theory for metalsemiconductor diodes [27][28] …”

Section: Resultsmentioning

confidence: 99%

“…It has been successfully used to provide detailed information on the laser-induced and ambient oxidation kinetics of H-Si ͑111͒. 25,26,37 Of particular interest is the recent investigation by Ye et al of the adsorption of organic contaminants on H-Si͑111͒ surfaces in dry air. 14 For comparison with solid-state electrical observations, we ran FTIR spectra for NH 4 F etched H-Si͑111͒ ATR crystals under experimental conditions identical to those for electrical measurements.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Liu¹,

Yu²

2003

J. Electrochem. Soc.

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The degradation of the electrical characteristics of hydrogen-terminated silicon ͑both n-and p-doped͒ under typical laboratory environments was investigated. When a hydrogen-terminated silicon ͑H-Si͒ surface was exposed to air under ambient conditions, the current density/bias voltage ͑J-V͒ curve of the mercury-silicon junction thus formed changed significantly during the first 50 h. For n-type H-Si surfaces, the J-V curve initially maintained ohmic characteristics for a period of 8-12 h, then evolved to diode behavior; for p-doped samples, the current density showed a rapid increase and reached a maximum in about 20 h. In both cases, the electrical property was recovered to some extent after sonication in organic solvents. In agreement with infrared spectroscopic results, organic contamination upon exposure to ambient air is suggested to play an important role in the change of the electrical performance of hydrogen-terminated silicon.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Liu¹,

Yu²

2003

J. Electrochem. Soc.

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“…Wet chemical processing was employed to remove these thick oxide layers and to obtain essentially atomically flat H-terminated Si(111) surfaces. 14 The ultrathin native oxide layer growing after the preparation in the normal atmosphere had a negligible influence on the measurements. For the Si(110) and Si(100) surfaces this preparation process provides less ideal surfaces with a roughness in the range of several angstroms.…”

Section: Methodsmentioning

confidence: 99%

Impulsive fracture of fused quartz and silicon crystals by nonlinear surface acoustic waves

Lehmann

Lomonosov

Hess

et al. 2003

Journal of Applied Physics

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During nonlinear evolution of laser-generated surface acoustic wace (SAW) pulses the stress increases with distance of propagation, and causes fracturing of brittle materials. This effect was used to evaluate the strength of isotropic fused quartz and anisortropic crystalline silicon with respect to impulsice loading in the nanosecond range and spontaneous cracking without using seed cracks. Crack nucleation and propagation along the surface was studied by optical microscopy and into the depth o f the bulk by the focused ion beam technique and confocal microscopy. In fused quartz, fracturing produced characteristic regular patterns at the surface with cracks extending into the bulk at an angle of 30º-35º to the surface in the direction of SAW propagation. On Si(111) surfacescracks extended at the surface in the 110 direction and propagated along the weak 111 cleavage plane into the bulk. Other crack planes were observed in only a few cases, e.g., at a larger depth and on the Si(100) surfaces. The observed fracture behavior was rationalized by the complex displacement and stress tensor fields induced by elliptically polarized SAWs

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“…In practice, O 2 /FG process also has an additional advantage over pure O 2 process for process time reduction. ) and no Si-H bonding after H 2 /N 2 plasma exposure [8]. However, study of H 2 effect in H 2 /N 2 gas mixture shows that poly-Si loss increases quickly with increasing H 2 content in H 2 /N 2 gas feed before saturated at ~20% H 2 .…”

Section: Chemistry Effectmentioning

confidence: 97%

Study of Film Growth on Silicon in Advanced High Dose Implant Photoresist Strip

Li¹,

2009

ECS Trans.

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Downstream high dose implant photoresist strip (HDIS) plasma processes tend to cause an oxide growth on the exposed poly Si and a poly-Si loss, both need to be carefully controlled/minimized to avoid undesirable impacts to the corresponding IC device performance. Ellipsometry and FTIR spectrometry were used to characterize the ultrathin film growth and poly-Si loss introduced by the various chemistries used in HDIS, including O2, O2/FG, O2/H2, and N2/H2. Some discrepancies were observed between results obtained from Ellipsometry and those from FTIR for ultra thin films. Oxide growth was evident in O2 dominant chemistries, accompanied by a low level poly-Si loss. No oxide growth was observed in non-O2 chemistries. Hydrogen addition provided a better clean and a shorter processing time, but at the cost of increasing poly-Si loss and oxide growth.

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In situ detection of F2 laser-induced oxidation on hydrogen-terminated Si(111) and Si(110) surfaces by Fourier transform infrared transmission spectroscopy

Cited by 8 publications

References 18 publications

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Effect of Organic Contamination on the Electrical Degradation of Hydrogen-Terminated Silicon upon Exposure to Air under Ambient Conditions

Impulsive fracture of fused quartz and silicon crystals by nonlinear surface acoustic waves

Study of Film Growth on Silicon in Advanced High Dose Implant Photoresist Strip

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