In Situ Device‐Level TEM Characterization Based on Ultra‐Flexible Multilayer MoS₂ Micro‐Cantilever (Adv. Mater. 28/2023)

Abstract

TEM Cantilever Chips In article number 2301439, Chaojian Hou, Jing Zhao, Lixin Dong, and co‐workers report a cantilever chip for in situ transmission electron microscopy (TEM). The chip consists of a MoS2 opto‐electromechanical sensor and a plasmonic antenna array built on the top of a Si3N4 cantilever, forming an electron‐beam‐transparent (thickness ≈100 nm) nano‐opto‐electromechanical system (NOEMS), enabling the in situ calibration/characterization of the NOEMS sensor or another device, with the NOEMS serving as a sensor to correlate the physical properties and atomic structures.

Femtosecond Laser‐Driven Phase Engineering of WS2 for Nano‐Periodic Phase Patterning and Sub‐ppm Ammonia Gas Sensing

“…The 2D transition metal dichalcogenides (TMDCs) such as WS 2 and MoS 2 have diverse polymorphs depending on the varied atom coordination modes and stacking forms between layers, [1] which determines the physical and chemical properties of TMDCs for versatile applications in electronics, [2] optoelectronic, [3] and energy storage. [4] Taking WS 2 as an example, semiconducting 2H-WS 2 , in which each tungsten atom is coordinated by six sulfur atoms in a trigonal prismatic shape, is considered as a promising candidate for field effect transistors (FETs), [5] phototransistors, [6,7] and valleytronics, [8] while metallic 1T/1T′-WS 2 with octahedral coordination of W by S atoms exhibits excellent superconductivity [9] and superior catalytic properties. [10] Recently, a new metastable 2M-WS 2 , in which "M" indicates the monoclinic crystallographic structure, has been synthesized.…”