2009
DOI: 10.1051/epjap/2009198
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In situ diagnostic of etch plasmas for process control using quantum cascade laser absorption spectroscopy

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Cited by 25 publications
(28 citation statements)
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“…The origin of the artefacts using short pulses (inter pulse mode) was identified as partly of the same nature as in the case of long laser pulses (intra pulse mode). Quantitative results for CH 4 absorption features fell short of the expected values. The nominal mixing ratio (=1) was confirmed by using TDLAS.…”
Section: General Spectroscopic Issuescontrasting
confidence: 67%
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“…The origin of the artefacts using short pulses (inter pulse mode) was identified as partly of the same nature as in the case of long laser pulses (intra pulse mode). Quantitative results for CH 4 absorption features fell short of the expected values. The nominal mixing ratio (=1) was confirmed by using TDLAS.…”
Section: General Spectroscopic Issuescontrasting
confidence: 67%
“…In pure CF 4 plasmas, SiCOH layers have been etched for different power values. The correlation of online and in situ measured concentrations of two etching products, CO and SiF 4 , with the etching rates determined ex situ has been studied using quantum cascade laser absorption spectroscopy in the mid infrared spectral range.…”
Section: Industrial Process Monitoring In Low-pressure Plasmasmentioning
confidence: 99%
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