In situ differential reflectance spectroscopy study of solid phase epitaxy in Si(111)-Fe and Si(111)-Cr systems

Dotsenko, S. A.; Галкин, Н. Г.; Koval, L. V.; Polyarnyĭ, V. O.

doi:10.1380/ejssnt.2006.319

Cited by 7 publications

(6 citation statements)

References 19 publications

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“…The unit cell consists of 6 formula units, in which Ca and Si atoms are grouped into four inequivalent sites. The formation a Ca 3 Si 4 film has been observed the first time at Ca deposition onto at 500°C Si(111)7x7 substrate with formation of indirect band gap of 0.63 eV [5], close to value predicted by ab initio calculation [6]. Thick semiconducting Ca 3 Si 4 films with Si cap layer were not grown earlier on silicon substrate.…”

Section: Introductionsupporting

confidence: 78%

Structure and Optical Properties of Ca Silicide Films and Si/Ca3Si4/Si(111) Heterostructures

Галкин¹,

Bezbabnyi

Dotsenko³

et al. 2014

SSP

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Thick, thin films and island of Ca silicide have been grown by Ca deposition onto 500 °C Si (111)7x7 substrates. The crystal structure of the grown layers strongly differs from the known Ca silicides (Ca2Si, CaSi, Ca5Si3, Ca14Si19, CaSi2). The phonon peaks at 389 and 416 cm-1 and the interband transition peaks (0.9-1.0, 1.3-1.7 and 2.0-2.5 eV) belongs to another silicide - Ca3Si4. Peculiarities of crystal, electronic, and phonon structure and optical properties of the grown Ca silicide films were measured by in situ and ex situ methods permit to state that the formed Ca silicide film has a composition Ca3Si4. Heterostructures with embedded Ca3Si4 films with different thicknesses have been formed atop the Ca3Si4 films by MBE and SPE at 500 °C. The observed density of pinholes with different sizes suggests the Si growth atop the Ca silicide follows a 3D mechanism. Photoluminescence was found first time in Si/Ca3Si4/Si (111) heterostructures.

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Section: Introductionsupporting

confidence: 78%

Structure and Optical Properties of Ca Silicide Films and Si/Ca3Si4/Si(111) Heterostructures

Галкин¹,

Bezbabnyi

Dotsenko³

et al. 2014

SSP

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“…However, CIPDF of the last stage (spectrum IV in Fig. 7(b) in [3]) is close to that of the 3rd one in Fig. 3(b).…”

Section: Resultssupporting

confidence: 57%

“…The DRS technique has been described in [3]. The experimental value obtained either during DRS study or after the experiments have been finished is differential reflection coefficient (DRC)…”

Section: Methodsmentioning

confidence: 99%

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Optical properties of magic clusters formed in both reactive and non-reactive systems

Dotsenko

Галкин

Koval

2006

e-J. Surf. Sci. Nanotechnol.

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Magic clusters are the smallest ordered quantum dots; hence, they represent promising materials for optoelectronics. However, their optical properties still have not been studied. Therefore, the purpose of this work is investigation of optical properties of magic clusters formed both in reactive (Cr/Si (111)) and non-reactive (In/Si(111)) systems. The 'adsorbate-silicon' system named 'reactive', if reactions resulting in silicide(s) formation take place in it. Using differential reflectance spectroscopy, optical functions of Indium and Chromium magic clusters were obtained. Having analyzed obtained spectra, we conclude that Cr magic clusters are CrSi islands and Si surface covered by In magic clusters is a semiconductor. A new method of obtaining saturation coverage of studied surface structures was proposed.

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“…It has been established that the formation of nanosize semiconductor islands of semiconductor metal's silicides and stannide leads to peak's formation in the spectra of the change of the imaginary part of dielectric function (CIPDF) in the photon energy range 1.1-1.7 eV [6], which is associated with the formation of the interband transitions with great oscillator force. In case of island formation of metallic silicides a monotonic decrease of CIPDF with increasing photon photons is observed.…”

mentioning

confidence: 99%

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

et al. 2016

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Abstract. By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with E-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.Semiconductor monolithic and polycrystalline nanoheterostructures created on the base of embedded in silicon matrix the nanocrystals (NCs) of semiconducting silicides (E-FeSi2, CrSi2, h-CaSi2, Mg2Si), as well as Mg stannide-silicide NCs can have fundamentally new optical properties associated with confinement of electrons and excitons. It is important to develop and create new light emitting and detecting devices and thermoelectrical convertors within silicon complimentary metal -oxide -semiconductor (CMOS) technology. Twoand three-layer structures with embedded E-FeSi2 precipitates (100-150 nm) in silicon with p-n junction were previously grown [1][2][3], as well as discovered and studied their electroluminescent properties. Decrease of E-FeSi2 NCs sizes down to 40-60 nm and an increase in the number of layers embedded into silicon, have shown promise of this approach in terms of increasing the efficiency of photo-and electroluminescence in grown structures [4,5]. To reduce the probability of mismatch dislocation formation one can use embedding in silicon the nanosize (5-20 nm) crystals of silicides CrSi2, Mg2Si, hCaSi2) and Mg stannide, when elastic adjustment of nanocrystal lattice to the silicon lattice or three-dimensional pseudomorphism is proposed. In this case, on the interface semiconductor silicide (stannide) nanocrystals -silicon can expect an absence or significant decrease of dangling bonds and, accordingly, carrier scattering centers and their nonradiative recombination as well as transport of carriers without additional scattering mechanisms.

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In situ differential reflectance spectroscopy study of solid phase epitaxy in Si(111)-Fe and Si(111)-Cr systems

Cited by 7 publications

References 19 publications

Structure and Optical Properties of Ca Silicide Films and Si/Ca<sub>3</sub>Si<sub>4</sub>/Si(111) Heterostructures

Structure and Optical Properties of Ca Silicide Films and Si/Ca<sub>3</sub>Si<sub>4</sub>/Si(111) Heterostructures

Optical properties of magic clusters formed in both reactive and non-reactive systems

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

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