2009
DOI: 10.1149/1.3207605
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In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

Abstract: We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B 2 H 6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 10 20 cm -3 was achieved at a high growth rate of 0.20 µm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quali… Show more

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Cited by 5 publications
(2 citation statements)
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“…The B contamination originated from the residue of the previous p-type Si film preparation experiments. 58 When the filter temperature is set at 500 • C, the B concentration in the Si film can be reduced to about 1/3000 of the non-filtered B concentration by a single elimination process. Generally, using the one-directional solidification method as the metallurgical purification method, the B concentration can be reduced to at most a third of the initial concentration because the segregation coefficient of B in Si is 0.8.…”
Section: Effect Of the Carrier Gas Onmentioning
confidence: 99%
“…The B contamination originated from the residue of the previous p-type Si film preparation experiments. 58 When the filter temperature is set at 500 • C, the B concentration in the Si film can be reduced to about 1/3000 of the non-filtered B concentration by a single elimination process. Generally, using the one-directional solidification method as the metallurgical purification method, the B concentration can be reduced to at most a third of the initial concentration because the segregation coefficient of B in Si is 0.8.…”
Section: Effect Of the Carrier Gas Onmentioning
confidence: 99%
“…In the next-generation semiconductor device technology, the development of a low-temperature selective epitaxial growth (SEG) process is desirable for fabricating an advanced miniature device structure without inter-diffusion of dopant atoms [86][87][88]. In the SEG process, it is important to increase the incubation time for Si crystal nucleation on SiO 2 .…”
Section: Selective Epitaxial Growthmentioning
confidence: 99%