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It is demonstrated that the mobility and number fluctuations in an n-channel metal oxide semiconductor field effect transistor (n-MOSFET), which has a shallow-doped channel, can be separately measured. The mobility fluctuation becomes the dominant source of noise in the case where a negative gate voltage is applied. This is because carriers are not near the Si/SiO interface. If a positive gate voltage is applied to the MOSFET, carriers exist near the Si/SiO interface, so that noise due to the number fluctuation becomes dominant.

We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B 2 H 6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 10 20 cm -3 was achieved at a high growth rate of 0.20 µm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quality of AP-PCVD Si film is high enough for semiconductor device applications. Si selective epitaxial growth by AP-PCVD has also been studied using atomic hydrogen as etchant species. Highly selective epitaxial growth of Si with good film quality has been observed at 470ºC by increasing H 2 gas concentration in the plasma.

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