Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

Kamikubo, Takashi; Ohnishi, Takayuki; Hara, Shigehiro; Anze, Hirohito; Hattori, Yoshiaki; Tamamushi, Shuichi; Bai, Shufeng; Wang, Jen-Shiang; Howell, Rafael C.; Li, Jiangwei; Tao, Jun; Wiley, James N.; Kurosawa, Terunobu; Saito, Yasuko; Takigawa, Tadahiro

doi:10.1117/12.865822

Cited by 13 publications

(5 citation statements)

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“…3,4 Therefore, a clear understanding of electron scattering in sample targets is necessary for the optimization of the electron beam energy. 9 EB technology is widely used for the inspection of patterned EUV masks [10][11][12][13][14] and in measurement of critical dimensions (CD-metrology) of the EUV masks. In previous works, the impact of electron scattering in the ML on the exposed resist profile have been widely investigated for the optimization of the proximity effect correction (PEC) [6][7][8] and of mask process correction (MPC).…”

Section: Introductionmentioning

confidence: 99%

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Iida¹,

Amano²,

Hirano³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inQuantitative analysis of electron energy loss spectra and modelling of optical properties of multilayer systems for extreme ultraviolet radiation regime Impact of electron scattering in extreme ultraviolet reflective multilayer (ML) on electron image was investigated. The secondary electron emission coefficient of Ru capped ML was lower than that of Ru bulk layer when the incident electron energy was more than 0.5 keV. In ML, the backscattered electrons (BSEs) diffused laterally along the Si layer and escaped from the Ru surface, while generating secondary electrons. As a result, spatial intensity distribution of the emitted electrons within the ML sample was broader than that of the Ru bulk sample. The deep and broad undershot dip appeared in the profile of scanning electron microscope image for knife-edge pattern on ML sample. This was because the BSEs near the edge diffused laterally and were blocked from escaping from the sample surface by the absorber layer. In the case of hp 50 nm line-and-space (L/S) pattern, dips appeared only for Ru bulk samples, because the dense L/S pattern profile is essentially a summation of two opposing knife-edges. Simulated diffusion lengths were in good agreements with experimentally obtained dip widths. The influential range of laterally diffusion effect was from 3 to 20 keV.

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Section: Introductionmentioning

confidence: 99%

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Iida¹,

Amano²,

Hirano³

et al. 2013

Journal of Vacuum Science & Technology B, Nanotechnology an

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show abstract

“…In order to achieve these requirements, mask process correction (MPC) software will be required. Some work on MPC software has already been reported 5,6 . In preparation for the manufacturing introduction of EUV, we have been actively engaged in evaluating the performance of such software from various EDA suppliers 7 .…”

Section: Introductionmentioning

confidence: 98%

A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements

Standiford

Bürgel

2013

SPIE Proceedings

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When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance of this Mask Proximity Correction software should not be specified based solely on traditional mask linearity measures. We propose a new mask linearity specification based on Time Dependent Dielectric Breakdown requirements for metal layers.

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“…The contour edge reaches the desired lower edge with the 7nm extension. This mimics a rule-based mask process correction (MPC) applied on such shapes (for MPC see also [10], [11]). Figure 3 shows the various shot configurations used to shoot the respective shapes in figure 2.…”

Section: Introductionmentioning

confidence: 99%

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Hagiwara

Bork²,

Fujimura³

2011

SPIE Proceedings

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Using Model-Based Mask Data Preparation (MB-MDP) complex masks with complex sub-resolution assist features (SRAFs) can be written in practical write times with today's leading-edge production VSB machines by allowing overlapping VSB shots. This simulation-based approach reduces shot count by taking advantage of the added flexibility in being able to overlap shots. The freedom to overlap shots, it turns out, also increases mask fidelity, CDU on the mask, and CDU on the wafer by writing sub-100nm mask features more accurately, and with better dose margin. This paper describes how overlapping shots enhance mask and wafer quality for various sub-100nm features on ArF masks. In addition, this paper describes how EUV mask accuracy can be enhanced uniquely by allowing overlapping shots.

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Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

Cited by 13 publications

References 0 publications

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

Impact of electron scattering in extreme ultraviolet reflective multilayer on electron image

A new mask linearity specification for EUV masks based on time dependent dielectric breakdown requirements

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

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