In situ growth of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

Liu, Fangyang; Li, Yang; Zhang, Kun; Wang, Bo; Yan, Chang; Lai, Yanqing; Zhang, Zhian; Li, Jie; Liu, Yexiang

doi:10.1016/j.solmat.2010.08.003

Cited by 205 publications

(72 citation statements)

References 34 publications

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“…Several methods have been used in the fabrication of CZTS thin film absorber layers, such as atomic beam sputtering [5], e-beam evaporation [6], thermal evaporation [7], magnetron sputtering [8][9][10][11], electrodeposition [12,13], spray pyrolysis deposition [14,15], pulsed laser deposition [16], etc. Most of these techniques were carried out using rigid substrates such as bilayer molybdenum (Mo) coated soda lime glass (SLG).…”

Section: Introductionmentioning

confidence: 99%

Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications

et al. 2015

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In this work, Cu 2 ZnSnS 4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S 2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils.

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Section: Introductionmentioning

confidence: 99%

Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications

et al. 2015

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“…The first reports on the use of RMS for the synthesis of CZTS thin films was published in 2010. Liu et al reported on the sputtering of an alloy target (Cu-Zn-Sn) [16] and of three independent targets (Cu, Zn and Sn) [17] in pure H 2 S atmosphere. The authors reported the growth of slightly crystallized CZTS films low concentration level of secondary phases such as Cu 2Àx S and Cu 3 SnS 4 which likely limits the solar cell efficiency ($1.5%) as reported by Chawla et al [18].…”

Section: Introductionmentioning

confidence: 99%

One-step synthesis of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

Cormier

Snyders

2015

Acta Materialia

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“…The fitting of the Murnaghan equation of state [10][11][12][13][14][15] to the total energies versus lattice parameters, yields to the stable structure ofβ-FeSi2 and the equilibrium lattice parameters. When the original cell volume is 279.79Å 3 , the total minimum energy of theβ-FeSi2 is achieved.…”

Section: Resultsmentioning

confidence: 99%

“…First-principles simulation based on density functional theory is one of the most promising methods for predicting properties of materials [9][10][11][12][13][14][15][16][17][18]. This work uses the pseudo potential energy to calculate the band structure, the dielectric constant, absorption coefficient, refractive index, reflectivity and energy loss function of theβ-FeSi2.…”

Section: Introductionmentioning

confidence: 99%

Study on the electronic structures and optical properties of -FeSi2 using the pseudopotential method

Zhang¹,

Zhao²,

Pan³

et al. 2018

Proceedings of the 2017 3rd International Forum on Energy, Environment Science and Materials (IFEESM 2017)

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Abstract. Electronic structures and optical properties of bulk β-FeSi2 are investigated in detail by first principles pseudo-potential methods based on the density function theory. The calculated results show that β-FeSi2 is a quasidirect band gap material with gap value of 0.74eV. The density of states is mainly composed of Fe 3d and Si 3p states. The dielectric constant, absorption coefficient, and the conductivity are also given. The results are compared with previous theoretical calculation and the available experimental data.

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In situ growth of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

Cited by 205 publications

References 34 publications

Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications

Growth of Cu2ZnSnS4 absorber layer on flexible metallic substrates for thin film solar cell applications

One-step synthesis of Cu2ZnSnS4 thin films by reactive magnetron co-sputtering

Study on the electronic structures and optical properties of -FeSi2 using the pseudopotential method

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