In situ HVTEM observation of the tip shape of tin liquid metal ion sources

In situ observation of the tip shape of AuGe liquid alloy ion sources using a high voltage transmission electron microscope

“…There is a great effort to establish a theoretical model of these sources in order to understand the particle emission processes involved. The experimental results obtained with AuSi, 15 Ga, 16 In, 17 Sn, 18 and CoGe 19 ion sources gave evidence for a material dependence of the tip shape. [12][13][14] Therefore we have started a systematic in situ tip shape investigation of pure metal and alloy LMIS in the 1 MeV TEM at the Max-Planck-Institut in Halle.…”

“…[16][17][18][19] Wagner et al 32 explained the process of microdroplet emission at the shanks behind the Taylor cone as follows: during the fabrication process of LMIS the surface of the emitter tip is roughened to get a better wetting with the liquid metal and a better material transport from the reservoir to the apex of the tip. [16][17][18][19] Wagner et al 32 explained the process of microdroplet emission at the shanks behind the Taylor cone as follows: during the fabrication process of LMIS the surface of the emitter tip is roughened to get a better wetting with the liquid metal and a better material transport from the reservoir to the apex of the tip.…”

In situ observation of the tip shape of Co–Ge liquid alloy ion sources in a high-voltage transmission electron microscope

“…Emission of microdroplets on the needle shank behind the Taylor cone was also observed at Au-Ge, 4 Ga, 6 In, 7,17 Sn, 8 and Au 17,18 ion sources.…”

Can direct field‐evaporation of doubly charged ions and post‐ionisation from the singly charged state co‐exist?

“…We know from TEM micrographs that as the voltage and current are raised the liquid jet becomes thicker. 7,8 This blunting or increase in emission area, however, entails an increase in the number of atomic evaporation sites (The field E has to decrease by less than 1% in order to account for the decrease seen in the case of I 2C /I C for Sn (Fig. 3)).…”