Modulating the crystal structure of the semiconductor photocatalyst is important to separate and migrate the photogenerated electrons and holes for good photocatalytic performance. Here, we show that Sn replaces part of In atoms in In 2 S 3 nanosheets to form bimetallic sulfide In 4 SnS 8 , which induces the distortion of the [InS 6 ] octahedron and improves the crystal symmetry of the spatial arrangement of [SnS 6 ] and [InS 6 ] octahedrons. The twisted [InS 6 ] octahedron can promote the separation of photogenerated carriers. The improved symmetry of the crystal structure promotes the migration of separated electrons through reducing the lattice scattering effect of the crystal structure, which is favorable to the rapid transfer of electrons from the bulk to the surface. Both endow In 4 SnS 8 with generation rates of CH 4 and CO about 20 and 12 times higher than those of In 2 S 3 and SnS 2 for the catalytic CO 2 photoreduction reaction, respectively. This work offers basic guidance to rationally design a photocatalyst for the improved separation of photoinduced electron/hole pairs.