In situ investigation of the formation of Cu(In,Ga)Se2 from selenised metallic precursors by X-ray diffraction—The impact of Gallium, Sodium and Selenium excess

Chemical incorporation of copper into indium selenide thin‐films for processing of CuInSe2 solar cells

“…The diffuse boundary between the copper and indium selenide layers that is observed in the XPS data is attributed in part to these In atoms and in part to interpenetration of the layers along grain boundaries. β-Cu 2-x Se and γ-In 2 Se 3 have been observed to react directly to form CuInSe 2 at temperatures >425°C in investigations of stacked selenide thin-films and diffusion couples [26,27]. However, the Raman spectra and XRD diffractograms reported here for partially selenized samples indicate a change in the copper selenide phase from Cu 2-x Se to CuSe during selenization of our samples.…”

Crystallographic properties and elemental migration in two-stage prepared CuIn1−Al Se2 thin films for photovoltaic applications

“…The IBR is the ratio between the signal of a peak, corrected for the isotopic abundance, and the sum of ion matrix signals, corrected each for isotopic abundance. In sample B1, the indium is absent from region a, but has a local maximum in region b and has a plateau in region c. The Se signal is maximum in region a and decreases towards the Two of the known formation pathways for CIS reported in the literature [19] can apply to this work:…”

Synthesis and Characterization of CIS Thin Film Using Chloride Solution

“…Due to the evaporation of Se source in used In-Selenization process revealed in in-situ XRD analysis. The mechanism of crystal growth can be seen in several papers [10], [11]. Also can be seen the decomposition of the precursor from 100 ℃ from 200 ℃ at 100 ℃, CuCl 2 peak cannot be seen.…”

“…Harmful to human health due to the use of Cd pretreatment are stable CdTe thin-film solar cell. All of these problems can be overcome in CuInSe 2 thin film solar cells developed before have recently been spotlighted, and many studies are underway [1], [2]- [5]. CuInSe 2 has direct transition type band gap, and compared different optical absorption compounds and 1×105 m-1's high optical absorption coefficient c, Ga, Al, 3 foot by 6 foot or the addition of elemental S of the optical band gap to 1.0 e V ~ 1.7 V e scope of control can determine the Chalcopyrite I-III-VI stepped into the compound of the two thin-film solar cells is as effective substances from optical absorption layer [6], [7].…”