In-situ low temperature cleaning of silicon surfaces using hydrogen atoms

Crossley, Alison; Sofield, C.J.; Sugden, S.; Clampitt, R.; Bradley, C.J.

doi:10.1016/0042-207x(94)00151-0

Cited by 13 publications

(4 citation statements)

References 16 publications

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“…(The local environment near an SiH 2 or SiH 3 species could be perturbed in other ways by H at , but dangling bond creation is the important concept in the indirect action of H at to decompose the higher hydrides.) The dangling bonds may facilitate diffusion or may speed decomposition by reactions such as (4). Reactions of the first type should have a firstorder dependence on the H at flux.…”

Section: Discussionmentioning

confidence: 99%

“…Thin films of amorphous hydrogenated Si (a-Si:H) are deposited by plasma-enhanced (PE) chemical vapor deposition (CVD) for several applications, and many properties of this useful material depend on the amount of hydrogen bonded in the bulk of the film. , The surface reactions of atomic H (H at ) during PE CVD film growth influence the concentration and bonding of H in the a-Si:H film . Cleaning of Si surfaces using H 2 plasmas has also been investigated. − The mechanisms and dynamics involved in the reactions of H at on metal − and Si − surfaces are fundamentally intriguing. Mounting evidence for direct, Eley−Rideal (ER), abstraction reactions of H at is of interest. − Here, we further define the kinetics of different reaction pathways for H at reactions with Si films.…”

Section: Introductionmentioning

confidence: 99%

“…1 Cleaning of Si surfaces using H 2 plasmas has also been investigated. [3][4][5] The mechanisms and dynamics involved in the reactions of H at on metal [6][7][8] and Si [9][10][11][12][13][14] surfaces are fundamentally intriguing. Mounting evidence for direct, Eley-Rideal (ER), abstraction reactions of H at is of interest.…”

Section: Introductionmentioning

confidence: 99%

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Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

Chiang¹,

Gates²,

Lee³

et al. 1997

J. Phys. Chem. B

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We report structural and kinetic studies of the reactions of hydride species in Si thin films with atomic deuterium (Dat). Infrared (IR) spectroscopy is used to obtain Si−H bonding information, and direct recoiling methods are used to measure reaction rates. Two kinds of films are prepared by filament-assisted growth from Si2H6 and are characterized by IR spectroscopy. A film containing only monohydride hydrogen is grown at 200 °C, and a polymer containing tri-, di-, and monohydride is grown at −110 °C. Rates of H abstraction by Dat, and of Dat insertion into Si−Si bonds, are reported. The abstraction rate of H by Dat in both films is similar to the abstraction rate on H-terminated crystal Si surfaces. The insertion rate into Si−Si bonds in both films is about one-tenth the rate of abstraction. A qualitative study of the etching reaction of Dat with the polymeric film is reported, and a strong temperature dependence is observed.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

Chiang¹,

Gates²,

Lee³

et al. 1997

J. Phys. Chem. B

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“…Similar results have been reported for Si (see Refs. [46,47] and works cited). For the column-III nitrides, H-atom cleaning was found to eliminate carbon contamination [48] but to be less effective in removing oxides [48,49].…”

Section: Surface Cleaningmentioning

confidence: 99%

Preparation and properties of clean Si3N4 surfaces

Bermudez

Perkins

2004

Applied Surface Science

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Effect of water and UV passivation on the luminescence of suspensions of silicon quantum dots

et al. 2009

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International audienceThis article presents the evolution of the photo-luminescence (PL) of silicon quantum dots (QDs) with an average diameter of 5–6 nm dispersed in alcohol under different conditions. Two samples were considered after alcohol dispersion: freshly synthesized (kept in air for 2 days) QDs which do not exhibit luminescence and air-aged (kept in air for 2 years) QDs exhibiting red-IR luminescence. Experiments performed with addition of a small volume of water, followed by heating for different times showed that the oxidation occurs gradually until transforming totally the initial material in SiO2. The oxidation process does not enable the appearance of PL from the Si core for dispersed non-aged powders, while it results in a blue shift of the PL maximum intensity for the aged ones. The results obtained after UV illumination clearly indicate an effect of the UV irradiation on the luminescence of QDs dispersed in aqueous environment, and the treatments with acidic water lead to the conclusion of a possible enhancement of the PL by hydrogen passivation of the non-radiative defects. This result should be taken into account for post-production treatments and applications, more particularly, considering a controlled and safe use of luminescent Si QDs

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In-situ low temperature cleaning of silicon surfaces using hydrogen atoms

Cited by 13 publications

References 16 publications

Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

Preparation and properties of clean Si3N4 surfaces

Effect of water and UV passivation on the luminescence of suspensions of silicon quantum dots

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