Preparation and properties of clean Si3N4 surfaces

Room Temperature Photoluminescence and Raman Characterization of Interface Characteristics of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions

“…23 Traditionally, many authors have used the Auger p-p ratio of Si LVV /N KLL as an indicator of SiN composition. [23][24][25][26] The detailed quantitative Auger depth profiling study of LPCVD and PECVD SiN films concluded that the p-p heights of the Si KLL and N KLL Auger transition in d N (E)/d E of the energy distribution is a reasonable indicator to determine SiN composition in Auger depth profiles over a wide range of atomic Si/N ratio. 23 It is generally agreed that the AES generally has excellent spatial resolution (15 nm), reasonable detection limit (<0.5 at%), good quantification with standards, and excellent speed.…”

Synthesis of PECVD a-SiCXNY:H membranes as molecular sieves for small gas separation

“…Several heterogeneous techniques are used for SiN X thin film deposition, like low-pressure chemical vapor deposition (LPCVD) [1][2][3], plasma enhanced chemical vapor deposition (PECVD) [4][5][6][7], reactive evaporation [8], ion beam deposition [9,10] and reactive sputtering [11,12]. For such applications, PECVD is more suitable, since it yields good quality deposits at much lower temperature.…”

Optical performance of thin films produced by the pulsed laser deposition of SiAlON and Er targets

“…The SE parameters where fitted using a Cauchy dispersion law for the refractive index (n(λ) = A + B/λ 2 + C/λ 4 ), with A, B, and C being free parameters together with the total film thickness t. The obtained thickness values range from 155 to 164 ± 10 nm for the films deposited at 2.22 and 4.10 J/cm 2 respectively, in good agreement with the originally designed thickness. The refractive index in the infrared range (at 1500 nm) is around 2.17 ± 0.02 for both films, which is significantly higher than that reported for silicon nitride films [7]. For longer wavelengths it is found that the refractive index of the film deposited at higher energies showed a higher refractive index.…”

“…This is due to their excellent properties that include a large refractive index that can be tuned from that of SiO 2 (1.45) [6] to that of Si 3 N 4 (2.01) [7], high transparency in the visible-near infrared range, good electrical properties and compatibility with the current Si-technology. More recently, in the search for efficient light emitting materials with superior performance and large integration capability has motivated the study of more complex matrices such as aluminum-doped silicon oxynitrides.…”