Synthesis of PECVD a-SiCXNY:H membranes as molecular sieves for small gas separation

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

“…Most recent reports [1][2][3][4][5][6] revealed many unique features of SiCN films which may be used as hard, dense, and high temperatureand corrosion-resistant coatings for metals (giving excellent tribological behavior), as well as highly selective gas separation membranes. [7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects.[2]In this communication we report on the fabrication of amorphous SiCN films by RPCVD using hydrogen as an upstream gas for microwave plasma generation, and tris(dimethylamino)silane (TrDMAS), (Me 2 N) 3 SiH, as a novel single-source precursor, being a carrier of Si-N and C-N units. Owing to the presence of hydrosilyl, Si-H bonds in the TrDMAS molecule, this precursor is strongly reactive with hydrogen atoms fed from the plasma region to the CVD reactor.…”

Si–Zr–C–N-based hydrophobic plasma polymer membranes for small gas molecule separation

“…4. There were five vibrational bands at 3360 cm −1 , 2900 cm −1 , 2160 cm −1 , 976 and 885 cm −1 that were attributed according to the literature to ν N-H, ν C-H, ν Si-H, ν Si-N and δ Si-C bonds, respectively [21,24,25].…”

“…As a complementary approach to the oxide way, an alternative solution consists in preparing non-oxide inorganic membranes (carbide or silicon carbonitride) whose chemical and thermal stabilities would significantly increase the durability of the process [19,20], especially in the targeted temperature range (200-700°C). Kafrouni et al have recently developed membranes of amorphous silicon carbonitride a-SiCxNy:H obtained by plasma-assisted CVD with reproducible measurements of ideal selectivity He/N 2 up to 170 at 300°C [21].…”

Influence of gas mixture during N+ ion modification under plasma conditions on surface structure and mechanical properties of Al–Zn alloys

“…Plasmochemical processes in PA CVD reactor may include, inter alia, the processes of ionic etching, surface nitriding or obtaining the coatings of chemical composition and microstructure, which are usually different from the material of the substrate [25][26][27]. Amorphous diamond-like carbon (DLC) layers implanted with silicon and nitrogen (SiCNH) [28,29] may be regarded as the example. Moreover, there is a research conducted aiming at the adhesion improvement of the obtained layers to the Al substrate.…”