2019
DOI: 10.1016/j.compositesb.2019.107116
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In-situ measurement of SiC/Si interfacial tensile strength of reaction bonded SiC/Si composite

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Cited by 11 publications
(4 citation statements)
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“…6-7 GPa [34], much larger than that of 22.7 MPa estimated by Nutt and King [35]. More recently, Hsu et al measured an interfacial tensile strength value of 4.3 GPa in reaction bonded SiC/Si ceramic composites [36]. This value is about five times lower than those of pure SiC, crystalline or amorphous Si.…”
Section: Introductionmentioning
confidence: 81%
“…6-7 GPa [34], much larger than that of 22.7 MPa estimated by Nutt and King [35]. More recently, Hsu et al measured an interfacial tensile strength value of 4.3 GPa in reaction bonded SiC/Si ceramic composites [36]. This value is about five times lower than those of pure SiC, crystalline or amorphous Si.…”
Section: Introductionmentioning
confidence: 81%
“…This process will cause weight loss and crack initiations in the matrix, leading to acceleration of SiC-SiC strength reduction [10]. The chemical interactions between composite and air can also affect the mechanical properties of SiC-SiC at high temperature [11,12]. SiC matrix would form a glass phase at high temperature, which wraps the fiber and enhance the interface bonding [25].…”
Section: Methodsmentioning
confidence: 99%
“…The results show that the fiber-matrix debonding behavior depends strongly on the nature of the carbon on the SiC fiber surface, which is different according to the SiC fiber. Hsu et al measured the interface tensile strength of SiC/Si directly for the first time by taking advantage of the FIB method [11].…”
Section: Introductionmentioning
confidence: 99%
“…In the Si–SiC composite, the homogeneously dispersed fine SiC particles are meant to act as “stress sinker” and to deflect/suppress the particle-to-particle crack propagation. SiC is regarded as a suitable lightweight reinforcement candidate in the Si-based anodes rather than other ceramic materials like TiN, TiB 2 , TiC, and WC, etc. ,, Since, SiC particles are harder than Si (viz., hardness of SiC film is ∼35–45 GPa and Si is ∼12 GPa) and forms a strong interfacial bond with the element (interfacial strength of SiC/Si ∼4.3 ± 1.9 GPa), it is likely that SiC particles will be able to restrain relative “movement” of Si matrix during Li insertion/removal. Additionally, during the course of lithiation/delithiation, the huge stress that usually gets generated in Si can be efficiently transferred to the SiC particles, which will then better preserve the integrity of the Si phase.…”
Section: Introductionmentioning
confidence: 99%