In situ measurements of InAs and InP (001) surface stress changes induced by surface reconstruction transitions

Fuster, David; González, M. U.; González, Y.; González, L.

doi:10.1016/j.susc.2005.09.046

Cited by 10 publications

(22 citation statements)

References 24 publications

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“…Such changes of surface reconstruction and composition have been shown to induce surface tension changes of up to 1 N/m. 14 After the first 0.8 ML, the slope rapidly decreases, suggesting the onset of stress relaxation (in this case the nucleation of the IMF dislocation array). The slope of the stress accumulation curve for coverages ranging from 10 to 20 ML is 0.29 6 0.02 N/m/per ML, approximately 10% of the value expected for pseudomorphic growth.…”

Section: -mentioning

confidence: 98%

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Ripalda

Sanchez

Taboada

et al. 2012

Applied Physics Letters

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We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

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Section: -mentioning

confidence: 98%

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Ripalda

Sanchez

Taboada

et al. 2012

Applied Physics Letters

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“…The ⌺ fluctuations observed during the pulsed InAs deposition are related to the surface stress contribution to ⌺ produced by the periodical changes on the surface reconstruction ͓͑2 ϫ 4͒ ↔ ͑4 ϫ 2͔͒ and must not be related to noise of the measurements. 15 The variation rate of ⌺ with deposited InAs and the early 3D RHEED pattern occurrence at ͑InAs͒ = 1.5 ML indicate that the nanostructure formation occurs from the beginning of InAs deposition in the pulsed growth mode followed here. At this stage, we propose that during In deposition on the In-rich ͑4 ϫ 2͒ surface reconstruction, small In droplets are surfing over the InAs wetting layer ͑previously formed by As/P exchange͒.…”

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confidence: 61%

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Fuster¹,

Rivera²,

Alén³

et al. 2009

Applied Physics Letters

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We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP͑001͒ by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs͑4 ϫ 2͒ ↔ ͑2 ϫ 4͒ surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs͑4 ϫ 2͒ surface during the In deposition step and their subsequent crystallization under the As step. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3108087͔ Semiconductor self-assembled quantum dots ͑QDs͒ have received much attention because of their application in advanced optical devices. 1,2 In particular, the active elements based on the InAs/InP heteroepitaxial system are interesting for their use in laser devices emitting at 1.55 m, compatible with optical fiber communications. 3 The self-assembling of QDs is a strain-driven process that takes place in highly lattice-mismatched semiconductor materials. The strained material grows in a layer-by-layer mode up to a certain critical thickness and then the growth mode switches from two dimensional ͑2D͒ to three dimensional ͑3D͒ with the net result of elastic energy relaxation ͑Stranski-Krastanov process͒. The InAs/GaAs heteroepitaxial system is a well studied example of this kind of process. 4 However, in the InAs/ InP͑001͒ heteroepitaxial system growing under usual molecular beam epitaxy ͑MBE͒ conditions, quantum wires ͑QWRs͒ elongated along the ͓110͔ direction are formed instead of QDs, which are in principle more efficient for elastic energy relaxation. Other authors have recently recognized the key role of the InAs As-rich ͑2 ϫ 4͒ surface reconstruction in a growth model for QWR formation. 5 Other works report the InAs/InP͑001͒ QD formation using MBE but always through the evolution of previously formed QWRs: either by the ripening of the initial QWRs during substrate cooling down under arsenic overpressure 6 or after substrate annealing under no arsenic flux at the InAs͑4 ϫ 2͒ surface reconstruction. 7 In a previous model we proposed that the growth of InAs on InP under a ͑2 ϫ 4͒ V element ended surface reconstruction produces a stress asymmetry at the InAs/InP interface, inducing an asymmetric relaxation process that finally results in QWR formation. 8,9 According to our previous model, the built-in interface strain anisotropy could be inhibited if the surface would be terminated in III element. 9 Therefore, if those conditions could be experimentally achieved, for example, growing InAs on the In-rich ͑4 ϫ 2͒ surface reconstruction, QDs instead of QWRs would be directly obtained in the InAs/InP͑001͒ system.In this work we have developed a method to implement this idea. The method consists of depositing InAs in a pulsed mode under experimental conditions in which the surface shows most of the growt...

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“…The absence of any reconstruction change and the lack of clear evidence for alloying during InAs deposition on InP͑001͒ suggests that it is the microscopic structure of the Asstabilized ͑2 ϫ 4͒-reconstructed InP surface which plays the crucial role in determining the detailed evolution of surface morphology during growth in this material system. Although this influence has been highlighted in a number of studies, 28,31,32 it is not yet fully understood at the atomic scale. Since As/P exchange-which takes place prior to any InAs deposition-effectively "locks in" the ͑2 ϫ 4͒ surface structure, it blocks any kinetic pathway to a lower energy, possibly alloyed reconstruction, 33 and any misfit strain after As/P exchange must be accommodated only within the ͑2 ϫ 4͒ structure itself; this cannot occur isotropically parallel to the surface due to its inherent asymmetry.…”

Section: Inas / Inp(001) Inas / Gaas(001)mentioning

confidence: 99%

Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction

Krzyzewski

Jones

2008

Phys. Rev. B

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Scanning tunneling microscopy has been used to study the deposition by molecular-beam epitaxy of thin InAs films on InP͑001͒ substrates and compared with InAs growth on GaAs͑001͒ under nominally identical conditions. In contrast to InAs/GaAs, InAs growth on InP does not proceed via a Stranski-Krastanov type mechanism, with a well-defined two-dimensional-three-dimensional growth mode transition, but instead a gradual and continuous surface roughening process occurs even from the earliest stages of deposition. Average height and surface roughness measurements indicate the absence of lateral surface correlations generated between adjacent elongated wires formed at higher deposition coverages. The origin of this growth behavior is attributed to the pregrowth formation of a self-templating arsenic-stabilized InP͑001͒-͑2 ϫ 4͒ surface, which is prepatterned on the atomic scale for the growth of highly anisotropic nanostructures.

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In situ measurements of InAs and InP (001) surface stress changes induced by surface reconstruction transitions

Cited by 10 publications

References 24 publications

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Nanostructure formation in InAs/InP(001) heteroepitaxy: Importance of surface reconstruction

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