Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Ripalda, J. M.; Sanchez, Ana M.; Taboada, A. G.; Rivera, Alejandro; Alén, Benito; González, Y.; González, L.; Briones, F.; Rotter, Thomas

doi:10.1063/1.3674986

Cited by 10 publications

(10 citation statements)

References 17 publications

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“…Both thin and thick AlSb layers grown using low-temperature (LT) technology were taken under consideration. The thinnest layers had thicknesses comparable to the critical value determined from Matthews-Blakesly formula under the assumption of 2D growth modes [22], whereas the thickest to the multiple of the island coalescence limit determined by Ripalda et al [23]. The results proved the role of both LT-AlSb layers in the process of TDD reduction.…”

Section: Introductionsupporting

confidence: 65%

“…Strong reduction of dislocation density was observed, especially if EPD values were to be considered (2.2 × 10 6 cm −2 ). The thickest AlSb layer worsened the crystal quality of GaSb material (#648) in comparison with the previously analyzed sample #651, even though, it was significantly thinner than the limit of the accumulation of own compressive strain determined by Ripalda et al [23] (42.0 nm). Nevertheless, the filtering role of AlSb was maintained.…”

Section: The Investigations With Lt-alsb Layercontrasting

confidence: 52%

“…Intermediate values suggest the presence of both and/or mixed type dislocations. Additionally, in [23] it was pointed out that the experimental values of ∆q Z /∆q X can be obtained from…”

Section: Resultsmentioning

confidence: 99%

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LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

et al. 2019

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We report on the role of AlSb material in the reduction of threading dislocation density (TDD) in the GaSb/AlSb/GaAs system. The AlSb layers were grown using low-temperature (LT) MBE, exploiting the interfacial misfit (IMF) dislocation array. AlSb layers with four different thicknesses in the range of 1–30 nm were investigated. The results showed the inhibiting role of LT-AlSb layers in the reduction of TDD. Values of TDD as low as 2.2 × 106 and 6.3 × 106 cm−2 for samples with thin and thick AlSb layers were obtained, respectively. The filtering role of AlSb material was proven despite the IMF-AlSb/GaAs interface’s imperfectness caused by the disturbance of a 90° dislocation periodic array by, most likely, 60° dislocations. The dislocation lines confined to the region of AlSb material were visible in HRTEM images. The highest crystal quality and smoother surface of 1.0 μm GaSb material were obtained using 9 nm thick AlSb interlayer. Unexpectedly, the comparative analysis of the results obtained for the GaSb/LT-AlSb/GaAs heterostructure and our best results for the GaSb/GaAs system showed that the latter can achieve both higher crystal quality and lower dislocation density.

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Section: Introductionsupporting

confidence: 65%

Section: The Investigations With Lt-alsb Layercontrasting

confidence: 52%

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LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

et al. 2019

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“…The RHEED and AFM analysis of the early stages of AlSb growth on Si indicate that AlSb epilayers also form islands on Si or GaAs substrates, [7][8][9][10][11] which are denser and coalesce at significantly lower thicknesses as compared to GaSb. 12 It has also been observed that introducing a thin buffer layer of AlSb can significantly improve the quality of GaSb films by accelerating the plateau-like growth of GaSb among AlSb islands.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

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The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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“…And threading dislocations in the InAs metamorphic buffer can penetrate into the active region and act as traps inducing leakage current and/or trap-assist tunneling. The threading dislocation can be reduced by using an AlSb or GaSb metamorphic buffer, since 90 o dislocations instead of 60 o dislocations are likely formed at the antimonide/GaAs interface that would not penetrate into the active region [3]. Then the InAs layer has to be replaced by InAs x Sb 1-x since the active layer has to be lattice matched to the metamorphic buffer.…”

mentioning

confidence: 99%

Modeling of Sb‐heterostructure backward diode for millimeter‐ and submillimeter‐wave detection

Aghdam

Zhao

2013

Phys. Status Solidi C

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We present modeling of Sb‐heterostructure backward tunneling diode (Sb‐HBD) for high efficient millimeter‐ and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non‐local band‐to‐band tunneling model combining with the standard drift‐diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb‐HBDs for high frequency operation applications is investigated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Cited by 10 publications

References 17 publications

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

LT-AlSb Interlayer as a Filter of Threading Dislocations in GaSb Grown on (001) GaAs Substrate Using MBE

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Modeling of Sb‐heterostructure backward diode for millimeter‐ and submillimeter‐wave detection

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