Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Abstract

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

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Growth mechanism and structure characterizations of GaSb islands grown on Si (100) substrates by LP-MOCVD

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Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

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