Growth mechanism and structure characterizations of GaSb islands grown on Si (100) substrates by LP-MOCVD

Lv, You; Liu, Renjun; Wang, Lian-Kai; Li, Guoxing; Zhang, Yuantao; Dong, Xiaoli; Zhang, Baolin

doi:10.1016/j.spmi.2015.04.022

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…VLS 机制中, 气相还原物首先溶于液相, 然后由液相析出固相使晶体生长 [19] . 依据此生长机制, 可以使材料在某一方向择优生长, 而在其它方向的生长受到抑制, 从而得到 1D 纳米材料, 如图 1 所示.…”

Section: 气-液-固生长机制unclassified

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Luo¹,

Ge²,

Sun³

et al. 2016

Acta Chim. Sinica

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Gallium antimonide (GaSb) has a relatively narrow band gap, high electron mobility and excellent saturation velocity, in addition, p-type GaSb nanowires (NWs) can be integrated with n-type nanowire devices potentially. These properties make it applicable both optically and electrically. However, it is noted that the radial dimensions and crystal quality have remarkable influence on the performance of photovoltaic devices. Based on traditional CVD technology, the influence of Au nanoparticles on Vapoure-Liquide-Solid (VLS) growth mechanisms has been studied, GaSb nanowires grown on two different substrates which undergo gold sputtering and gold solution dropping treatment have different geometries of seed particle on nanowire tip and shapes of its body, moreover, the contact angle between these two parts provides stable condition for nanowires growth which has considerable impact on growth direction. The entire growing process is divided into three phases by the temperature: the heating phase, the synthesis phase and the cooling phase. Controllable synthesis has been realized by fixing the synthesis temperature at 900 ℃ and keeping the other factors unchanged. In the meantime, changing the synthesis time from 60 minutes to 240 minutes in steps, it is found that the breakthrough in radial dimensions and specific surface has been realized with the increase of growing time, the GaSb nanowire of 50 µm has been achieved in this paper. Furthermore, the nanowires were systematically characterized by scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray diffraction (XRD), which suggest that this material has the zincblende structure with good crystal quality and high purity. Also, the Multi-mode phonon oscillation and band-edge emission of the nanowires are shown through Raman spectroscopy (Raman) and Photoluminescence Spectroscopy (PL). All these demonstrate the superior surface morphology and good crystallinity of the obtained nanowires. The study makes contribution to the extensive exploration and novel discoveries of precise controllable growth of GaSb nanowires.

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Section: 气-液-固生长机制unclassified

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Luo¹,

Ge²,

Sun³

et al. 2016

Acta Chim. Sinica

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Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

et al. 2018

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Biomass porous carbon-based composite for high performance supercapacitor

Wang

Wen

2020

Mater. Res. Express

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Biomass porous carbons with abundant pore structure, surface functional groups, and excellent electrical conductivity, are widely used for electrode materials. In this work, biomass carbon with 3D mesh structure was loaded with metal sulfide to synthesize porous carbon-based ultrathin Ni3S2 layered nanosheet structure supercapacitor composite material electrode. C/Ni3S2-16 showed 600 F g−1 of high specific capacitance with 20 A g−1 current density. After 5,000 charge and discharge cycles, 88.8% of the maximum (imital) specific capacitance was maintained at 10 A g−1. The assembled C/Ni3S2-16//C asymmetric supercapacitor achieved an energy density of up to 35.7 Wh Kg−1, which was remained at 27.9 Wh Kg−1 with a high power density at 1500 W kg−1. Developed pore structure of biomass porous carbon provide sufficient space for the electrolyte in and out of the electrode, therefore the potentially high electrochemical activity and energy density of the transition metal sulfide were fully exhibited.

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Growth mechanism and structure characterizations of GaSb islands grown on Si (100) substrates by LP-MOCVD

Cited by 3 publications

References 24 publications

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Controlled Synthesis of GaSb Nanowires Based on CVD-grown and Their Optical Characterization

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Biomass porous carbon-based composite for high performance supercapacitor

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