In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields

Brintlinger, Todd; Lim, Sung‐Hwan; Baloch, Kamal H.; Alexander, P.W.; Qi, Yi; Barry, John F.; Melngailis, J.; Salamanca‐Riba, L.; Takeuchi, Ichiro; Cumings, John

doi:10.1021/nl9036406

Cited by 155 publications

(117 citation statements)

References 27 publications

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“…This architecture would appear to be robust to unforeseen changes in DW structure, with the stress-induced pinning and motion being largely unaffected by DW chirality or structure. Although an experimental demonstration is very much required for this technology to be developed further, control over DW position has already been observed in a thin-film system using a similar layer structure [63].…”

Section: Future Developmentsmentioning

confidence: 99%

Nanowire spintronics for storage class memories and logic

Hrkac

Dean

Allwood

2011

Phil. Trans. R. Soc. A.

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Patterned magnetic nanowires are extremely well suited for data storage and logic devices. They offer non-volatile storage, fast switching times, efficient operation and a bistable magnetic configuration that are convenient for representing digital information. Key to this is the high level of control that is possible over the position and behaviour of domain walls (DWs) in magnetic nanowires. Magnetic random access memory based on the propagation of DWs in nanowires has been released commercially, while more dynamic shift register memory and logic circuits have been demonstrated. Here, we discuss the present standing of this technology as well as reviewing some of the basic DW effects that have been observed and the underlying physics of DW motion. We also discuss the future direction of magnetic nanowire technology to look at possible developments, hurdles to overcome and what nanowire devices may appear in the future, both in classical information technology and beyond into quantum computation and biology.

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Section: Future Developmentsmentioning

confidence: 99%

Nanowire spintronics for storage class memories and logic

Hrkac

Dean

Allwood

2011

Phil. Trans. R. Soc. A.

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“…After etching away the Si substrate, they demonstrated that mechanical clamping effects from the substrate on the PZT/Galfenol heterostructure were greatly mitigated, notably improving ␣ ME relative to that of the unetched Si structures. Brintlinger et al 14 mechanically released BTO/Galfenol layers from SrTiO 3 ͑STO͒ substrates by a focused ion beam method, and observed magnetic domain wall movement in the FeGa layer due to the strain a͒ Electronic mail: zgwang@vt.edu.…”

Section: Introductionmentioning

confidence: 99%

Magnetoelectric effect in crystallographically textured BaTiO3 films deposited on ferromagnetic metallic glass foils

Wang¹,

Li²,

Yang³

et al. 2011

Journal of Applied Physics

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We demonstrate a significant control of the polarization response under an applied magnetic field for a magnetoelectric (ME) heterostructure. This structure was comprised of a 2 μm thick ferroelectric BaTiO3 (BTO) film deposited on flexible ferromagnetic metallic glass foil (25 μm thick). Au was used as a buffer layer to control BTO growth orientation, and to protect the metallic glass from oxidation. x-ray diffraction and scanning electron microscopy demonstrated the successful growth of well-crystallized BTO films with a high degree of (111) orientation on the amorphous metallic glass foils. Well-defined polarization (P-E) and magnetization (M-H) hysteresis loops confirmed the coexistence of ferroelectric and ferromagnetic properties. A ME voltage coefficient of about ∼60 mV/cm Oe was measured.

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“…An applied voltage generates strain in the piezoelectric layer which is transferred almost entirely to the magnetostrictive layer by elastic coupling if the latter layer is much thinner than the former [14,15]. This strain/stress can cause the magnetization of the magnetostrictive layer to rotate by a large angle [16], which has been demonstrated in recent experiments, although not at the nanoscale [17]. These rotations are sufficiently large to fulfill the requirements of Bennett clocking in logic chains [13].…”

Section: Introductionmentioning

confidence: 93%

“…is calculated at each time step from Equation (17). We also assume that stress is applied instantaneously and removed instantaneously.…”

Section: H T mentioning

confidence: 99%

Magnetization dynamics, Bennett clocking and associated energy dissipation in multiferroic logic

Fashami¹,

Roy²,

Atulasimha³

et al. 2011

Nanotechnology

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It has been recently shown that the magnetization of a multiferroic nanomagnet, consisting of a magnetostrictive layer elastically coupled to a piezoelectric layer, can be rotated by a large angle if a tiny voltage of few tens of mV is applied to the piezoelectric layer. The potential generates stress in the magnetostrictive layer and rotates its magnetization by ~ 90 0 to implement Bennett clocking in nanomagnetic logic chains. Because of the small voltage needed, this clocking method is far more energy-efficient than those that would employ spin transfer torque or magnetic fields to rotate the magnetization. In order to assess if such a clocking scheme can be also reasonably fast, we have studied the magnetization dynamics of a multiferroic logic chain with nearest neighbor dipole coupling using the Landau-Lifshitz-Gilbert (LLG) equation. We find that clock rates of ~ 2 GHz are feasible while still maintaining the exceptionally high energy-efficiency. For this clock rate, the energy dissipated per clock cycle per bit flip is ~52,000 kT at room temperature in the clocking circuit for properly designed nanomagnets. Had we used spin transfer torque to clock at the same rate, the

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In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields

Cited by 155 publications

References 27 publications

Nanowire spintronics for storage class memories and logic

Nanowire spintronics for storage class memories and logic

Magnetoelectric effect in crystallographically textured BaTiO3 films deposited on ferromagnetic metallic glass foils

Magnetization dynamics, Bennett clocking and associated energy dissipation in multiferroic logic

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