Magnetoelectric effect in crystallographically textured BaTiO3 films deposited on ferromagnetic metallic glass foils

Abstract

We demonstrate a significant control of the polarization response under an applied magnetic field for a magnetoelectric (ME) heterostructure. This structure was comprised of a 2 μm thick ferroelectric BaTiO3 (BTO) film deposited on flexible ferromagnetic metallic glass foil (25 μm thick). Au was used as a buffer layer to control BTO growth orientation, and to protect the metallic glass from oxidation. x-ray diffraction and scanning electron microscopy demonstrated the successful growth of well-crystallized BTO films with a high degree of (111) orientation on the amorphous metallic glass foils. Well-defined polarization (P-E) and magnetization (M-H) hysteresis loops confirmed the coexistence of ferroelectric and ferromagnetic properties. A ME voltage coefficient of about ∼60 mV/cm Oe was measured.

Magnetoelectric properties of flexible BiFeO3/Ni tapes

“…[1][2][3][4][5] Ferroelectric films directly deposited on metal substrate have their great advantages compared with films on ceramics. For example, base metal substrates (nickel, copper, and iron) cost far less than single crystal ceramic substrates.…”

“…8 Gold has also been used as a buffer between the BaTiO 3 and the metglas foil. 5 It has been a technical challenge in the field to directly deposit ferroelectric films on metal substrates with satisfied polarization and piezoelectricity. The main technical difficulty is that metaloxide thin films are often deposited in an oxygen ambient ($100 mTorr) at a temperature of 700-900…”

“…For example, ME film sensors using ferromagnetic metal tapes as substrates are expect to have much better ME performance because ferroelectric films are not constrained by the thin and flexible substrates. 5 To deposit ferroelectric films on metal substrates with desired physical properties, multilayer metal-oxides or noble metals are usually used as buffer layers. For example, LaMnO 3 /MgO/IBAD-MgO/Y 2 O 3 /Al 2 O 3 multi-layers have been used as the buffer between the BaTiO 3 film and the nickel substrate.…”

Domain rotation induced strain effect on the magnetic and magneto-electric response in CoFe2O4/Pb(Mg,Nb)O3-PbTiO3 heterostructures

“…Details of the measurement method were reported previously. 13 A magnet was used as the dc magnetic bias field (H dc ). A 10kHz ac magnetic field H ac was then applied along the long axis of the heterostructure.…”

Epitaxial growth of Pb(Zr0.53Ti0.47)O3 films on Pt coated magnetostrictive amorphous metallic substrates toward next generation multiferroic heterostructures

“…A maximum value of d 33 $ 46 pm/V was measured from the PZT films which represents a 53% enhancement over previous attempts to realize piezoelectric/magnetostrictive film heterostructures. 22 We propose that, based upon these results, this approach represents a viable pathway toward realizing quasitwo dimensional MF heterostructures allowing for low dielectric loss noise and DC leakage resistance leading to the development of MF-based magnetic field sensors with high sensitivity and low 1/f noise floor.…”