In situ passivation of GaAs surface with aluminum oxide with MOVPE

Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics

“…We have obtained GaAs (2Â4) surface reconstruction by H 2 annealing for desorption of surface arsenic atoms. 13) Desorption of excess arsenic, however, was insufficient even though we obtained a (2Â4) surface, resulting in formation of a trace amount of arsenic oxide. In this study, we successfully obtained GaAs cð8Â2Þ surface reconstruction, which has the lowest arsenic content that we have ever observed.…”

“…3) The next challenge is the growth of a smooth passivation layer using an aluminum-containing material. We examined the aluminum passivation in our previous study, 13) which was deposited by injecting only trimethylaluminum (TMAl), resulting in three-dimensional growth and a roughened surface with the root-mean-square (RMS) value of 4 nm. The subst.…”

In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

“…In our previous study [5], we examined passivation by aluminum which was deposited by injecting only TMAl (trimethylaluminum): this resulted in 3-dimensional growth and roughened surface with the roughness root-mean-square (RMS) value of 4 nm. The passivation by aluminum showed no improvement in either C-V characteristics or photoluminescence (PL) intensity because of insufficient coverage by the As-oxide-preventing aluminum layer and of the roughened surface.…”

“…The amount of excess arsenic atoms on the surface can be estimated in terms of surface reconstruction, which we can observe in situ on the growth surface using optical measurement. We have obtained GaAs (2 Â 4) surface reconstruction by H 2 anneal for desorption of surface arsenic atoms subsequent to the MOVPE of GaAs [5]. Desorption of excess arsenic, however, was insufficient: even though we obtained a (2 Â 4) surface, it resulted in the formation of arsenic oxide.…”

Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure

“…This sulfide treatment is characterized by removal of the native oxide in a slow etching process and a subsequent passivation of the surface with a thin sulfide layer. Other than sulfide solutions, incorporation of antimony, silane (SiH 4 ), aluminum oxide (AlO x ), and octadecylthiol (ODT) thin layers has also been used to modify the In(Ga)As surface states [14][15][16]. Instead of completely eliminating the In(Ga)As mid-gap states, it has been proposed recently that the sensitivity of these states to chemisorption can be used for gas sensing [17][18][19].…”