In situ photoelectron spectroscopic characterization of c-BN films deposited via plasma enhanced chemical vapor deposition employing fluorine chemistry

Shammas, Joseph; Sun, Tianze; Koeck, Franz A.; Rezikyan, Aram; Nemanich, R. J.

doi:10.1016/j.diamond.2015.04.002

Cited by 14 publications

(4 citation statements)

References 41 publications

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“…For an X–Y bond, the charges transfer from one atom Y to another more electronegative atom X, and then, the X–Y dipole is directed from Y toward the more electronegative atom X. The magnitude of the dipole moment is partly determined by the electronegativity difference between two atoms, and generally, it will increase with an increase in the electronegativity difference . The dipole moment directed away from the surface will make the EAs more positive, while the dipole moment directed toward the surface will make the EAs more negative …”

Section: Resultsmentioning

confidence: 99%

“…The magnitude of the dipole moment is partly determined by the electronegativity difference between two atoms, and generally, it will increase with an increase in the electronegativity difference. 56 The dipole moment directed away from the surface will make the EAs more positive, while the dipole moment directed toward the surface will make the EAs more negative. 56 The structures of the C−N−B−H-terminated and Hterminated diamond (111) surfaces are similar (refer to Figure 2a), and both of them have a bond to hydrogen.…”

Section: Resultsmentioning

confidence: 99%

“…56 The dipole moment directed away from the surface will make the EAs more positive, while the dipole moment directed toward the surface will make the EAs more negative. 56 The structures of the C−N−B−H-terminated and Hterminated diamond (111) surfaces are similar (refer to Figure 2a), and both of them have a bond to hydrogen. However, for C−N−B−H terminations, H is more electronegative than B, which directs the B−H dipole away from the surface.…”

Section: Resultsmentioning

confidence: 99%

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Monolayer Cubic Boron Nitride Terminated Diamond (111) Surfaces for Quantum Sensing and Electron Emission Applications

Shen

Liu

et al. 2020

ACS Appl. Mater. Interfaces

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Monolayer cubic boron (B) nitride (N) terminated diamond (111) surfaces are proposed and investigated using density functional theory. The carbon (C)–N–B-terminated diamond (111) surface with a monolayer coverage of hydrogen and the C–N–B-terminated diamond (111) surface with a monolayer coverage of fluorine [named C–N–B–F-terminated (111) surface] have positive electron affinities (PEAs) with no inter-band gap states and nearly perfect alignment of nitrogen vacancy (NV). Thus, they could potentially be applied in NV-based quantum sensors. The C–B–N-terminated diamond (111) surface with a monolayer coverage of hydrogen [named C–B–N–H-terminated (111) surface], which has negative EAs (NEAs) and an adsorption energy of −3.51 eV, could potentially be employed in electron emission devices. Specifically, C–N–B–F- and C–B–N–H-terminated diamond (111) surfaces have the largest PEA (4.48 eV) and NEA (−4.00 eV), respectively, of any reported diamond surfaces. We also propose a formalism to construct multiple dipole structures on diamond surfaces to yield extremely large EAs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Monolayer Cubic Boron Nitride Terminated Diamond (111) Surfaces for Quantum Sensing and Electron Emission Applications

Shen

Liu

et al. 2020

ACS Appl. Mater. Interfaces

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“…QDs have different optical and electronic properties from larger particles due to quantum mechanics [21]. QDs have unique properties for applications in batteries [22], LEDs [23], biosensors [24], and cancer therapy [25]. QDs of h-BN have a wide bandgap and excellent chemical stability at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

et al. 2022

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In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface of polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace the surface condition during the growth and perform the formation of BN. The observation of surface morphology by scanning electron microscopy and atomic force microscopy showed the nanodots of BN on Ni films. The existence of crystal h-BN quantum dots was determined by the analysis of Raman spectra and Kevin probe force microscopy. The cathodoluminescence of h-BN quantum dots performed at the wavelength of 546 and 610 nm, attributed to the trapping centers involving impurities and vacancies. Moreover, the influence of temperatures for the substrate and boron source cell was also investigated in the report. When the k-cell temperature of boron and growth temperature of substrate increased, the emission intensity of cathodoluminescence spectra increased, indicating the better growth parameters for h-BN quantum dots.

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Recent Development of Boron Nitride towards Electronic Applications

Izyumskaya

Demchenko

Das

et al. 2017

Adv Elect Materials

117

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Boron nitride occurs in several polymorphs, among which cubic and hexagonal varieties have been extensively studied over many years and have found numerous practical applications. Although various forms of BN have been used as lubricant and abrasive material for many years, the unique electronic properties of BN have not been yet utilized. Due to their wide optical bandgaps (the widest among nitride semiconductors), cubic and hexagonal polymorphs of BN are promising candidates for optoelectronic devices operating in the deep‐ultraviolet range and for high‐power electronic devices for switching and radio‐frequency applications. The layered structure of hexagonal BN allows preparation of ultrathin nanosheets with very smooth surfaces and low defect density, which are proved to be useful as supporting substrates and gate dielectric layers in graphene‐based structures. The first device demonstrations are very encouraging. In this contribution, the recent progress in properties, fabrication technologies, and emerging applications of BN as a wide‐gap semiconductor material is reviewed.

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In situ photoelectron spectroscopic characterization of c-BN films deposited via plasma enhanced chemical vapor deposition employing fluorine chemistry

Cited by 14 publications

References 41 publications

Monolayer Cubic Boron Nitride Terminated Diamond (111) Surfaces for Quantum Sensing and Electron Emission Applications

Monolayer Cubic Boron Nitride Terminated Diamond (111) Surfaces for Quantum Sensing and Electron Emission Applications

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

Recent Development of Boron Nitride towards Electronic Applications

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